Improvement of the morphological stability of Ni-silicided Si 0.8Ge0.2 layers by using a molybdenum interlayer

Young Woo Ok; S. H. Kim; Y. J. Song; K. H. Shim; Tae Yeon Seong

Improvement of the morphological stability of Ni-silicided Si _0.8Ge_0.2 layers by using a molybdenum interlayer

Young Woo Ok^*
, S. H. Kim
, Y. J. Song
, K. H. Shim
, Tae Yeon Seong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The morphological stability of Ni-silicided Si_0.8Ge _0.2 layers was investigated for improvement by using a molybdenum interlayer. A 200-nm-thick layer was epitaxially grown on an n-type (001) Si substrate by chemical vapor deposition. The samples were annealed in a tube furnace in a flowing N₂ ambient. The results show that the use of Mo interlayer is effective in improving the thermal stability of the Ni-germanosilicide and also effective in improving oxidation resistance.

Original language	English
Pages (from-to)	1088-1093
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	3
Publication status	Published - 2004 May
Externally published	Yes

Bibliographical note

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "Improvement of the morphological stability of Ni-silicided Si 0.8Ge0.2 layers by using a molybdenum interlayer",

abstract = "The morphological stability of Ni-silicided Si0.8Ge 0.2 layers was investigated for improvement by using a molybdenum interlayer. A 200-nm-thick layer was epitaxially grown on an n-type (001) Si substrate by chemical vapor deposition. The samples were annealed in a tube furnace in a flowing N2 ambient. The results show that the use of Mo interlayer is effective in improving the thermal stability of the Ni-germanosilicide and also effective in improving oxidation resistance.",

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year = "2004",

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language = "English",

volume = "22",

pages = "1088--1093",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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AU - Ok, Young Woo

AU - Kim, S. H.

AU - Song, Y. J.

AU - Shim, K. H.

AU - Seong, Tae Yeon

PY - 2004/5

Y1 - 2004/5

N2 - The morphological stability of Ni-silicided Si0.8Ge 0.2 layers was investigated for improvement by using a molybdenum interlayer. A 200-nm-thick layer was epitaxially grown on an n-type (001) Si substrate by chemical vapor deposition. The samples were annealed in a tube furnace in a flowing N2 ambient. The results show that the use of Mo interlayer is effective in improving the thermal stability of the Ni-germanosilicide and also effective in improving oxidation resistance.

AB - The morphological stability of Ni-silicided Si0.8Ge 0.2 layers was investigated for improvement by using a molybdenum interlayer. A 200-nm-thick layer was epitaxially grown on an n-type (001) Si substrate by chemical vapor deposition. The samples were annealed in a tube furnace in a flowing N2 ambient. The results show that the use of Mo interlayer is effective in improving the thermal stability of the Ni-germanosilicide and also effective in improving oxidation resistance.

UR - https://www.scopus.com/pages/publications/3242700665

M3 - Article

AN - SCOPUS:3242700665

SN - 1071-1023

VL - 22

SP - 1088

EP - 1093

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Improvement of the morphological stability of Ni-silicided Si _0.8Ge_0.2 layers by using a molybdenum interlayer

Abstract

Bibliographical note

ASJC Scopus subject areas

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