Improvement of the thermal and chemical stability of Al doped ZnO films

I. H. Kim; D. Y. Ku; J. H. Ko; D. Kim; K. S. Lee; J. H. Jeong; T. S. Lee; B. Cheong; Y. J. Baik; W. M. Kim

doi:10.1007/s10832-006-8315-8

Improvement of the thermal and chemical stability of Al doped ZnO films

I. H. Kim, D. Y. Ku, J. H. Ko, D. Kim, K. S. Lee, J. H. Jeong, T. S. Lee, B. Cheong, Y. J. Baik, W. M. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

To improve the stability of sputter-deposited ZnO:Al (AZO) films at high temperature above 300°C, an amorphous Zn-Sn-O (ZTO) film was deposited on the top of AZO films as an protective layer by co-sputtering of pure ZnO and SnO₂ targets. Amorphous ZTO films had resistivity in the range from 10^-2 to 10^-3 Ωcm and were stable up to temperature of 400°C. Heat treatments of bare AZO films in the atmosphere at 400°C resulted in a dramatic increase in the resistivity accompanied by substantial decrease in carrier concentration and Hall mobility. The AZO films covered with the ZTO film showed remarkable improvement in thermal stability for subsequent heat treatments in the temperature range from 200 to 400°C in the atmosphere as well as chemical stability in weak acidic solution. X-ray photoelectron spectroscopy analysis showed that the improvement was attained by ZTO layer acting as diffusion barrier of oxygens and/or water vapors.

Original language	English
Pages (from-to)	241-245
Number of pages	5
Journal	Journal of Electroceramics
Volume	17
Issue number	2-4
DOIs	https://doi.org/10.1007/s10832-006-8315-8
Publication status	Published - 2006 Dec

Keywords

Amorphous
Chemical
Stability
Thermal
Transparent conducting oxide
ZTO
Zinc stannate
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Mechanics of Materials
Materials Chemistry
Electrical and Electronic Engineering

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10.1007/s10832-006-8315-8

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title = "Improvement of the thermal and chemical stability of Al doped ZnO films",

abstract = "To improve the stability of sputter-deposited ZnO:Al (AZO) films at high temperature above 300°C, an amorphous Zn-Sn-O (ZTO) film was deposited on the top of AZO films as an protective layer by co-sputtering of pure ZnO and SnO2 targets. Amorphous ZTO films had resistivity in the range from 10-2 to 10-3 Ωcm and were stable up to temperature of 400°C. Heat treatments of bare AZO films in the atmosphere at 400°C resulted in a dramatic increase in the resistivity accompanied by substantial decrease in carrier concentration and Hall mobility. The AZO films covered with the ZTO film showed remarkable improvement in thermal stability for subsequent heat treatments in the temperature range from 200 to 400°C in the atmosphere as well as chemical stability in weak acidic solution. X-ray photoelectron spectroscopy analysis showed that the improvement was attained by ZTO layer acting as diffusion barrier of oxygens and/or water vapors.",

keywords = "Amorphous, Chemical, Stability, Thermal, Transparent conducting oxide, ZTO, Zinc stannate, ZnO",

author = "Kim, {I. H.} and Ku, {D. Y.} and Ko, {J. H.} and D. Kim and Lee, {K. S.} and Jeong, {J. H.} and Lee, {T. S.} and B. Cheong and Baik, {Y. J.} and Kim, {W. M.}",

year = "2006",

month = dec,

doi = "10.1007/s10832-006-8315-8",

language = "English",

volume = "17",

pages = "241--245",

journal = "Journal of Electroceramics",

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TY - JOUR

T1 - Improvement of the thermal and chemical stability of Al doped ZnO films

AU - Kim, I. H.

AU - Ku, D. Y.

AU - Ko, J. H.

AU - Kim, D.

AU - Lee, K. S.

AU - Jeong, J. H.

AU - Lee, T. S.

AU - Cheong, B.

AU - Baik, Y. J.

AU - Kim, W. M.

PY - 2006/12

Y1 - 2006/12

N2 - To improve the stability of sputter-deposited ZnO:Al (AZO) films at high temperature above 300°C, an amorphous Zn-Sn-O (ZTO) film was deposited on the top of AZO films as an protective layer by co-sputtering of pure ZnO and SnO2 targets. Amorphous ZTO films had resistivity in the range from 10-2 to 10-3 Ωcm and were stable up to temperature of 400°C. Heat treatments of bare AZO films in the atmosphere at 400°C resulted in a dramatic increase in the resistivity accompanied by substantial decrease in carrier concentration and Hall mobility. The AZO films covered with the ZTO film showed remarkable improvement in thermal stability for subsequent heat treatments in the temperature range from 200 to 400°C in the atmosphere as well as chemical stability in weak acidic solution. X-ray photoelectron spectroscopy analysis showed that the improvement was attained by ZTO layer acting as diffusion barrier of oxygens and/or water vapors.

AB - To improve the stability of sputter-deposited ZnO:Al (AZO) films at high temperature above 300°C, an amorphous Zn-Sn-O (ZTO) film was deposited on the top of AZO films as an protective layer by co-sputtering of pure ZnO and SnO2 targets. Amorphous ZTO films had resistivity in the range from 10-2 to 10-3 Ωcm and were stable up to temperature of 400°C. Heat treatments of bare AZO films in the atmosphere at 400°C resulted in a dramatic increase in the resistivity accompanied by substantial decrease in carrier concentration and Hall mobility. The AZO films covered with the ZTO film showed remarkable improvement in thermal stability for subsequent heat treatments in the temperature range from 200 to 400°C in the atmosphere as well as chemical stability in weak acidic solution. X-ray photoelectron spectroscopy analysis showed that the improvement was attained by ZTO layer acting as diffusion barrier of oxygens and/or water vapors.

KW - Amorphous

KW - Chemical

KW - Stability

KW - Thermal

KW - Transparent conducting oxide

KW - ZTO

KW - Zinc stannate

KW - ZnO

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U2 - 10.1007/s10832-006-8315-8

DO - 10.1007/s10832-006-8315-8

M3 - Article

AN - SCOPUS:33847179528

SN - 1385-3449

VL - 17

SP - 241

EP - 245

JO - Journal of Electroceramics

JF - Journal of Electroceramics

IS - 2-4

ER -

Improvement of the thermal and chemical stability of Al doped ZnO films

Abstract

Keywords

ASJC Scopus subject areas

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