Improvements of Voc by selective emitter pattern optimization in screen printed crystalline Si solar cells

Kyeong Yeon Cho; Il Hwan Kim; Dong Joon Oh; Ji Myung Shim; Eun Joo Lee; Hyun Woo Lee; Jun Young Choi; Ji Sun Kim; Jeong Eun Shin; Soo Hong Lee; Hae Seok Lee

doi:10.1109/PVSC.2010.5614358

Improvements of V_oc by selective emitter pattern optimization in screen printed crystalline Si solar cells

Kyeong Yeon Cho, Il Hwan Kim, Dong Joon Oh, Ji Myung Shim, Eun Joo Lee, Hyun Woo Lee, Jun Young Choi, Ji Sun Kim, Jeong Eun Shin, Soo Hong Lee, Hae Seok Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We present a high efficiency (η ∼ 18.5%) mono-crystalline Si solar cells (A=15.6×15.6cm²) with a selective emitter structure using a conventional diffusion process (POCl₃) and screen printed contact. Especially, in this paper, we focus on the improvement of Voc by selective emitter pattern optimization. As a result, we improve about 4mV Voc as a function of heavy emitter area, investigate the cause of the Voc increase by internal quantum efficiency and life time. The fabricated solar cell with selective emitter has accomplished Voc 635.78 mV, Jsc 37.03 mA/cm², FF 78.35%, Eff 18.45%. The result shows improvement of Voc 8 mV, Jsc 0.57 A/cm², Eff 0.5 % in comparison with the reference cell (homogeneous emitter structure) and improvement of Voc 3.7 mV, Eff 0.1 % as a function of heavy emitter size.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	1335-1338
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2010.5614358
Publication status	Published - 2010
Externally published	Yes
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 2010 Jun 20 → 2010 Jun 25

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	10/6/20 → 10/6/25

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2010.5614358

Cite this

Cho, K. Y., Kim, I. H., Oh, D. J., Shim, J. M., Lee, E. J., Lee, H. W., Choi, J. Y., Kim, J. S., Shin, J. E., Lee, S. H., & Lee, H. S. (2010). Improvements of V_oc by selective emitter pattern optimization in screen printed crystalline Si solar cells. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 1335-1338). Article 5614358 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5614358

Improvements of V_oc by selective emitter pattern optimization in screen printed crystalline Si solar cells. / Cho, Kyeong Yeon; Kim, Il Hwan; Oh, Dong Joon et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 1335-1338 5614358 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cho, KY, Kim, IH, Oh, DJ, Shim, JM, Lee, EJ, Lee, HW, Choi, JY, Kim, JS, Shin, JE, Lee, SH & Lee, HS 2010, Improvements of V_oc by selective emitter pattern optimization in screen printed crystalline Si solar cells. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614358, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1335-1338, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 10/6/20. https://doi.org/10.1109/PVSC.2010.5614358

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title = "Improvements of Voc by selective emitter pattern optimization in screen printed crystalline Si solar cells",

abstract = "We present a high efficiency (η ∼ 18.5%) mono-crystalline Si solar cells (A=15.6×15.6cm2) with a selective emitter structure using a conventional diffusion process (POCl3) and screen printed contact. Especially, in this paper, we focus on the improvement of Voc by selective emitter pattern optimization. As a result, we improve about 4mV Voc as a function of heavy emitter area, investigate the cause of the Voc increase by internal quantum efficiency and life time. The fabricated solar cell with selective emitter has accomplished Voc 635.78 mV, Jsc 37.03 mA/cm2, FF 78.35%, Eff 18.45%. The result shows improvement of Voc 8 mV, Jsc 0.57 A/cm2, Eff 0.5 % in comparison with the reference cell (homogeneous emitter structure) and improvement of Voc 3.7 mV, Eff 0.1 % as a function of heavy emitter size.",

author = "Cho, {Kyeong Yeon} and Kim, {Il Hwan} and Oh, {Dong Joon} and Shim, {Ji Myung} and Lee, {Eun Joo} and Lee, {Hyun Woo} and Choi, {Jun Young} and Kim, {Ji Sun} and Shin, {Jeong Eun} and Lee, {Soo Hong} and Lee, {Hae Seok}",

year = "2010",

doi = "10.1109/PVSC.2010.5614358",

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pages = "1335--1338",

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note = "35th IEEE Photovoltaic Specialists Conference, PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

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AU - Cho, Kyeong Yeon

AU - Kim, Il Hwan

AU - Oh, Dong Joon

AU - Shim, Ji Myung

AU - Lee, Eun Joo

AU - Lee, Hyun Woo

AU - Choi, Jun Young

AU - Kim, Ji Sun

AU - Shin, Jeong Eun

AU - Lee, Soo Hong

AU - Lee, Hae Seok

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N2 - We present a high efficiency (η ∼ 18.5%) mono-crystalline Si solar cells (A=15.6×15.6cm2) with a selective emitter structure using a conventional diffusion process (POCl3) and screen printed contact. Especially, in this paper, we focus on the improvement of Voc by selective emitter pattern optimization. As a result, we improve about 4mV Voc as a function of heavy emitter area, investigate the cause of the Voc increase by internal quantum efficiency and life time. The fabricated solar cell with selective emitter has accomplished Voc 635.78 mV, Jsc 37.03 mA/cm2, FF 78.35%, Eff 18.45%. The result shows improvement of Voc 8 mV, Jsc 0.57 A/cm2, Eff 0.5 % in comparison with the reference cell (homogeneous emitter structure) and improvement of Voc 3.7 mV, Eff 0.1 % as a function of heavy emitter size.

AB - We present a high efficiency (η ∼ 18.5%) mono-crystalline Si solar cells (A=15.6×15.6cm2) with a selective emitter structure using a conventional diffusion process (POCl3) and screen printed contact. Especially, in this paper, we focus on the improvement of Voc by selective emitter pattern optimization. As a result, we improve about 4mV Voc as a function of heavy emitter area, investigate the cause of the Voc increase by internal quantum efficiency and life time. The fabricated solar cell with selective emitter has accomplished Voc 635.78 mV, Jsc 37.03 mA/cm2, FF 78.35%, Eff 18.45%. The result shows improvement of Voc 8 mV, Jsc 0.57 A/cm2, Eff 0.5 % in comparison with the reference cell (homogeneous emitter structure) and improvement of Voc 3.7 mV, Eff 0.1 % as a function of heavy emitter size.

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