Skip to main navigation
Skip to search
Skip to main content
Korea University Pure Home
Home
Profiles
Research units
Equipment
Research output
Press/Media
Search by expertise, name or affiliation
Improving performance of high-power indium gallium nitride/gallium nitride-based vertical light-emitting diodes by employing simple n-type electrode pattern
Woong Sun Yum
, June O. Song
, Hwan Hee Jeong
, Jeong Tak Oh
,
Tae Yeon Seong
*
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
3
Citations (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Improving performance of high-power indium gallium nitride/gallium nitride-based vertical light-emitting diodes by employing simple n-type electrode pattern'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Bias Voltage
10%
Current Spreading
10%
Drive Current
10%
Electrical Performance
10%
Electrode Pattern
100%
Electrode Structure
10%
Forward Bias
10%
Forward Voltage
10%
Gallium Nitride
100%
High Power
100%
Indium Gallium Nitride (InGaN)
100%
Light Output
10%
Light-emitting Diodes
100%
Low Junction Temperature
10%
Optical Performance
10%
Patterned Electrode
50%
Performance Improvement
100%
Reference Electrode
40%
Spreading Behavior
10%
Vertical Geometry
100%
Vertical Light-emitting Diodes
100%
Wall-plug Efficiency
10%
Engineering
Bias Voltage
9%
Current Drive
9%
Electrical Performance
9%
Electrode Structure
9%
Electrode Type
100%
Forward Bias
9%
Forward Voltage
9%
Highlight
9%
Junction Temperature
9%
Light Output
9%
Light-Emitting Diode
100%
Nitride
100%
Optical Performance
9%
Plug Efficiency
9%
Chemical Engineering
Gallium Nitride
100%
Indium
100%