Improving the output power of GaN-based light-emitting diode using Ag particles embedded within a SiO2 current blocking layer

Jae Seong Park; Jaecheon Han; Tae Yeon Seong

doi:10.1016/j.spmi.2015.03.027

Improving the output power of GaN-based light-emitting diode using Ag particles embedded within a SiO₂ current blocking layer

Jae Seong Park, Jaecheon Han, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Abstract GaN-based light-emitting diodes (LEDs) fabricated with Ag particles embedded within a SiO₂ current blocking layer (CBL) are demonstrated. The Ag particles varied from 100 to 250 nm in size, and had a density of ∼3.8 × 10⁸ cm^-2. The transmittances obtained from GaN/sapphire and Ag particles/GaN/sapphire were 75 and 66% at 450 nm, respectively. The LEDs (chip size: 1000 × 1000 μm²) fabricated with ITO-only, ITO/SiO₂ CBL, and ITO/Ag particles/SiO₂ CBL showed forward-bias voltages of 3.05, 3.25 and 3.1 V at 20 mA, respectively. The LEDs with the ITO/Ag particles/SiO₂ CBL yielded 11.9 and 7.0% higher light output powers (at 20 mA) than the LEDs with the ITO-only and ITO/SiO₂ CBL, respectively. The improved output power is explained by the combined effects of the improved extraction and current spreading.

Original language	English
Article number	3674
Pages (from-to)	361-366
Number of pages	6
Journal	Superlattices and Microstructures
Volume	83
DOIs	https://doi.org/10.1016/j.spmi.2015.03.027
Publication status	Published - 2015 Jul 1

Keywords

Ag particle
Current spreading
Extraction
LED

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.spmi.2015.03.027

Cite this

@article{7dbf140a7de349e7b6ce1145d5364aea,

title = "Improving the output power of GaN-based light-emitting diode using Ag particles embedded within a SiO2 current blocking layer",

abstract = "Abstract GaN-based light-emitting diodes (LEDs) fabricated with Ag particles embedded within a SiO2 current blocking layer (CBL) are demonstrated. The Ag particles varied from 100 to 250 nm in size, and had a density of ∼3.8 × 108 cm-2. The transmittances obtained from GaN/sapphire and Ag particles/GaN/sapphire were 75 and 66% at 450 nm, respectively. The LEDs (chip size: 1000 × 1000 μm2) fabricated with ITO-only, ITO/SiO2 CBL, and ITO/Ag particles/SiO2 CBL showed forward-bias voltages of 3.05, 3.25 and 3.1 V at 20 mA, respectively. The LEDs with the ITO/Ag particles/SiO2 CBL yielded 11.9 and 7.0% higher light output powers (at 20 mA) than the LEDs with the ITO-only and ITO/SiO2 CBL, respectively. The improved output power is explained by the combined effects of the improved extraction and current spreading.",

keywords = "Ag particle, Current spreading, Extraction, LED",

author = "Park, {Jae Seong} and Jaecheon Han and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development Program , 10041878 , development of WPE 75% LED device process and standard evaluation technology funded by the Ministry of Knowledge Economy , Korea. Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd. All rights reserved.",

year = "2015",

month = jul,

day = "1",

doi = "10.1016/j.spmi.2015.03.027",

language = "English",

volume = "83",

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AU - Park, Jae Seong

AU - Han, Jaecheon

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program , 10041878 , development of WPE 75% LED device process and standard evaluation technology funded by the Ministry of Knowledge Economy , Korea. Publisher Copyright: © 2015 Elsevier Ltd. All rights reserved.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - Abstract GaN-based light-emitting diodes (LEDs) fabricated with Ag particles embedded within a SiO2 current blocking layer (CBL) are demonstrated. The Ag particles varied from 100 to 250 nm in size, and had a density of ∼3.8 × 108 cm-2. The transmittances obtained from GaN/sapphire and Ag particles/GaN/sapphire were 75 and 66% at 450 nm, respectively. The LEDs (chip size: 1000 × 1000 μm2) fabricated with ITO-only, ITO/SiO2 CBL, and ITO/Ag particles/SiO2 CBL showed forward-bias voltages of 3.05, 3.25 and 3.1 V at 20 mA, respectively. The LEDs with the ITO/Ag particles/SiO2 CBL yielded 11.9 and 7.0% higher light output powers (at 20 mA) than the LEDs with the ITO-only and ITO/SiO2 CBL, respectively. The improved output power is explained by the combined effects of the improved extraction and current spreading.

AB - Abstract GaN-based light-emitting diodes (LEDs) fabricated with Ag particles embedded within a SiO2 current blocking layer (CBL) are demonstrated. The Ag particles varied from 100 to 250 nm in size, and had a density of ∼3.8 × 108 cm-2. The transmittances obtained from GaN/sapphire and Ag particles/GaN/sapphire were 75 and 66% at 450 nm, respectively. The LEDs (chip size: 1000 × 1000 μm2) fabricated with ITO-only, ITO/SiO2 CBL, and ITO/Ag particles/SiO2 CBL showed forward-bias voltages of 3.05, 3.25 and 3.1 V at 20 mA, respectively. The LEDs with the ITO/Ag particles/SiO2 CBL yielded 11.9 and 7.0% higher light output powers (at 20 mA) than the LEDs with the ITO-only and ITO/SiO2 CBL, respectively. The improved output power is explained by the combined effects of the improved extraction and current spreading.

KW - Ag particle

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KW - Extraction

KW - LED

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