Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector

Jae Seong Park; Jaecheon Han; Jae Woong Han; Heonjin Seo; Jung Tak Oh; Tae Yeon Seong

doi:10.1016/j.spmi.2013.09.019

Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector

Jae Seong Park, Jaecheon Han, Jae Woong Han, Heonjin Seo, Jung Tak Oh, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report on the improved performance of near-ultraviolet (385 nm) InGaN/GaN multi-quantum well light emitting diodes (LEDs) by enhancing the thermal and electrical properties of Ag-based reflector. It is shown that after annealing at 500 °C, indium (In)-overlaid Ag contact exhibits considerably higher reflectivity at 385 nm than Ag only contact. After annealing at 500°C, both the Ag only and In-overlaid Ag contacts are ohmic with a specific contact resistance of 6.7 × 10^-4 and 8.7 × 10^-5 Ω cm², respectively. Near-UV (385 nm) LEDs fabricated with annealed Ag only and In-overlaid Ag reflectors show a forward-bias voltage of 3.4 and 3.37 V at an injection current of 20 mA, respectively. The LEDs with the annealed In-overlaid Ag reflector exhibit 24.7% higher light output power (at 20 mA) than the LEDs with the 500°C-annealed Ag only reflector. X-ray photoemission spectroscopy was performed to understand the improved electrical properties of the In-overlaid Ag reflectors. The enhanced thermal stability of In-overlaid Ag reflector is also briefly described.

Original language	English
Pages (from-to)	7-14
Number of pages	8
Journal	Superlattices and Microstructures
Volume	64
DOIs	https://doi.org/10.1016/j.spmi.2013.09.019
Publication status	Published - 2013

Bibliographical note

Funding Information:
This work was supported by the World Class University program through the National Research Foundation of Korea funded by MEST ( R33-2008-000-10025-0 ), the Industrial Strategic Technology Development Program funded by MKE, Korea, and Development of WPE 75% LED Device Process and Standard Evaluation Technology funded by the MKE (Korea).

Keywords

Ag ohmic reflector
In overlayer
Near-ultraviolet light-emitting diode
Thermal stability

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2013.09.019

Cite this

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title = "Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector",

abstract = "We report on the improved performance of near-ultraviolet (385 nm) InGaN/GaN multi-quantum well light emitting diodes (LEDs) by enhancing the thermal and electrical properties of Ag-based reflector. It is shown that after annealing at 500 °C, indium (In)-overlaid Ag contact exhibits considerably higher reflectivity at 385 nm than Ag only contact. After annealing at 500°C, both the Ag only and In-overlaid Ag contacts are ohmic with a specific contact resistance of 6.7 × 10-4 and 8.7 × 10-5 Ω cm2, respectively. Near-UV (385 nm) LEDs fabricated with annealed Ag only and In-overlaid Ag reflectors show a forward-bias voltage of 3.4 and 3.37 V at an injection current of 20 mA, respectively. The LEDs with the annealed In-overlaid Ag reflector exhibit 24.7% higher light output power (at 20 mA) than the LEDs with the 500°C-annealed Ag only reflector. X-ray photoemission spectroscopy was performed to understand the improved electrical properties of the In-overlaid Ag reflectors. The enhanced thermal stability of In-overlaid Ag reflector is also briefly described.",

keywords = "Ag ohmic reflector, In overlayer, Near-ultraviolet light-emitting diode, Thermal stability",

author = "Park, {Jae Seong} and Jaecheon Han and Han, {Jae Woong} and Heonjin Seo and Oh, {Jung Tak} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the World Class University program through the National Research Foundation of Korea funded by MEST ( R33-2008-000-10025-0 ), the Industrial Strategic Technology Development Program funded by MKE, Korea, and Development of WPE 75% LED Device Process and Standard Evaluation Technology funded by the MKE (Korea).",

year = "2013",

doi = "10.1016/j.spmi.2013.09.019",

language = "English",

volume = "64",

pages = "7--14",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

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T1 - Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector

AU - Park, Jae Seong

AU - Han, Jaecheon

AU - Han, Jae Woong

AU - Seo, Heonjin

AU - Oh, Jung Tak

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the World Class University program through the National Research Foundation of Korea funded by MEST ( R33-2008-000-10025-0 ), the Industrial Strategic Technology Development Program funded by MKE, Korea, and Development of WPE 75% LED Device Process and Standard Evaluation Technology funded by the MKE (Korea).

PY - 2013

Y1 - 2013

N2 - We report on the improved performance of near-ultraviolet (385 nm) InGaN/GaN multi-quantum well light emitting diodes (LEDs) by enhancing the thermal and electrical properties of Ag-based reflector. It is shown that after annealing at 500 °C, indium (In)-overlaid Ag contact exhibits considerably higher reflectivity at 385 nm than Ag only contact. After annealing at 500°C, both the Ag only and In-overlaid Ag contacts are ohmic with a specific contact resistance of 6.7 × 10-4 and 8.7 × 10-5 Ω cm2, respectively. Near-UV (385 nm) LEDs fabricated with annealed Ag only and In-overlaid Ag reflectors show a forward-bias voltage of 3.4 and 3.37 V at an injection current of 20 mA, respectively. The LEDs with the annealed In-overlaid Ag reflector exhibit 24.7% higher light output power (at 20 mA) than the LEDs with the 500°C-annealed Ag only reflector. X-ray photoemission spectroscopy was performed to understand the improved electrical properties of the In-overlaid Ag reflectors. The enhanced thermal stability of In-overlaid Ag reflector is also briefly described.

AB - We report on the improved performance of near-ultraviolet (385 nm) InGaN/GaN multi-quantum well light emitting diodes (LEDs) by enhancing the thermal and electrical properties of Ag-based reflector. It is shown that after annealing at 500 °C, indium (In)-overlaid Ag contact exhibits considerably higher reflectivity at 385 nm than Ag only contact. After annealing at 500°C, both the Ag only and In-overlaid Ag contacts are ohmic with a specific contact resistance of 6.7 × 10-4 and 8.7 × 10-5 Ω cm2, respectively. Near-UV (385 nm) LEDs fabricated with annealed Ag only and In-overlaid Ag reflectors show a forward-bias voltage of 3.4 and 3.37 V at an injection current of 20 mA, respectively. The LEDs with the annealed In-overlaid Ag reflector exhibit 24.7% higher light output power (at 20 mA) than the LEDs with the 500°C-annealed Ag only reflector. X-ray photoemission spectroscopy was performed to understand the improved electrical properties of the In-overlaid Ag reflectors. The enhanced thermal stability of In-overlaid Ag reflector is also briefly described.

KW - Ag ohmic reflector

KW - In overlayer

KW - Near-ultraviolet light-emitting diode

KW - Thermal stability

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ER -

Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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