In As/GaAs quantum dot lasers with dots in an asymmetric In xGa1-xAs quantum well structure

W. J. Choi; J. D. Song; J. I. Lee; K. C. Kim; T. G. Kim

doi:10.1016/j.physb.2005.12.221

In As/GaAs quantum dot lasers with dots in an asymmetric In _xGa_1-xAs quantum well structure

W. J. Choi, J. D. Song, J. I. Lee, K. C. Kim, T. G. Kim

School of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

We report the advantages of using InAs/GaAs quantum dots (QDs) having InxGa1-xAs asymmetric strain-released layers (ASRL) over the conventional InAs/GaAs QDs in long wavelength operation. Atomic layer molecular beam epitaxy was used to enhance the uniformity of InAs QDs in an InxGa1-xAs quantum well structure. The red shift as large as ∼50nm could be achieved by varying the thickness and indium composition of the InxGa1-xAs ASRL. We observed the longest wavelength of 1288 nm produced by the InAs/GaAs QD with ASRL by photoluminescence (PL). However, the stimulated emission gave the longest wavelength of 1206 nm, blue-shifted as large as ∼82nm from the PL peak at room temperature, which is attributed to the optical transitions via higher sub-band levels of the InAs/GaAs QDs.

Original language	English
Pages (from-to)	886-889
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.221
Publication status	Published - 2006 Apr 1
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29

Bibliographical note

Funding Information:
This work was supported by KOSEF through q- at Hanyang University, Korea.

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

Keywords

Dots-in-a-well
Laser diodes
Quantum dot
Strain relaxation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2005.12.221

Cite this

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title = "In As/GaAs quantum dot lasers with dots in an asymmetric In xGa1-xAs quantum well structure",

abstract = "We report the advantages of using InAs/GaAs quantum dots (QDs) having InxGa1-xAs asymmetric strain-released layers (ASRL) over the conventional InAs/GaAs QDs in long wavelength operation. Atomic layer molecular beam epitaxy was used to enhance the uniformity of InAs QDs in an InxGa1-xAs quantum well structure. The red shift as large as ∼50nm could be achieved by varying the thickness and indium composition of the InxGa1-xAs ASRL. We observed the longest wavelength of 1288 nm produced by the InAs/GaAs QD with ASRL by photoluminescence (PL). However, the stimulated emission gave the longest wavelength of 1206 nm, blue-shifted as large as ∼82nm from the PL peak at room temperature, which is attributed to the optical transitions via higher sub-band levels of the InAs/GaAs QDs.",

keywords = "Dots-in-a-well, Laser diodes, Quantum dot, Strain relaxation",

author = "Choi, {W. J.} and Song, {J. D.} and Lee, {J. I.} and Kim, {K. C.} and Kim, {T. G.}",

note = "Funding Information: This work was supported by KOSEF through q- at Hanyang University, Korea. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

year = "2006",

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T1 - In As/GaAs quantum dot lasers with dots in an asymmetric In xGa1-xAs quantum well structure

AU - Choi, W. J.

AU - Song, J. D.

AU - Lee, J. I.

AU - Kim, K. C.

AU - Kim, T. G.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - We report the advantages of using InAs/GaAs quantum dots (QDs) having InxGa1-xAs asymmetric strain-released layers (ASRL) over the conventional InAs/GaAs QDs in long wavelength operation. Atomic layer molecular beam epitaxy was used to enhance the uniformity of InAs QDs in an InxGa1-xAs quantum well structure. The red shift as large as ∼50nm could be achieved by varying the thickness and indium composition of the InxGa1-xAs ASRL. We observed the longest wavelength of 1288 nm produced by the InAs/GaAs QD with ASRL by photoluminescence (PL). However, the stimulated emission gave the longest wavelength of 1206 nm, blue-shifted as large as ∼82nm from the PL peak at room temperature, which is attributed to the optical transitions via higher sub-band levels of the InAs/GaAs QDs.

AB - We report the advantages of using InAs/GaAs quantum dots (QDs) having InxGa1-xAs asymmetric strain-released layers (ASRL) over the conventional InAs/GaAs QDs in long wavelength operation. Atomic layer molecular beam epitaxy was used to enhance the uniformity of InAs QDs in an InxGa1-xAs quantum well structure. The red shift as large as ∼50nm could be achieved by varying the thickness and indium composition of the InxGa1-xAs ASRL. We observed the longest wavelength of 1288 nm produced by the InAs/GaAs QD with ASRL by photoluminescence (PL). However, the stimulated emission gave the longest wavelength of 1206 nm, blue-shifted as large as ∼82nm from the PL peak at room temperature, which is attributed to the optical transitions via higher sub-band levels of the InAs/GaAs QDs.

KW - Dots-in-a-well

KW - Laser diodes

KW - Quantum dot

KW - Strain relaxation

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