In-Ga-Zn-O thin film transistor with HfO 2 gate insulator prepared using various O 2/(Ar + O 2) gas ratios

Young Je Jo; In Hwan Lee; Joon Seop Kwak

doi:10.1016/j.materresbull.2012.04.094

In-Ga-Zn-O thin film transistor with HfO ₂ gate insulator prepared using various O ₂/(Ar + O ₂) gas ratios

Young Je Jo, In Hwan Lee, Joon Seop Kwak

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have investigated the effect of the deposition of an HfO ₂ thin film as a gate insulator with different O ₂/(Ar + O ₂) gas ratios using RF magnetron sputtering. The HfO ₂ thin film affected the device performance of amorphous indium-gallium-zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O ₂/(Ar + O ₂) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm ²/(V s). Compared to those prepared with an O ₂/(Ar + O ₂) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm ²/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O ₂/(Ar + O ₂) gas ratio.

Original language	English
Pages (from-to)	2919-2922
Number of pages	4
Journal	Materials Research Bulletin
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/j.materresbull.2012.04.094
Publication status	Published - 2012 Oct
Externally published	Yes

Bibliographical note

Funding Information:
This work was mainly supported by KRF Grant funded by the Korean Government (MEST) (KRF-2007-314-D00168), and was also partially supported by the IT R&D program of MKE/KEIT [KI002182]. The authors in SCNU acknowledge the support by the WCU program at Sunchon National University.

Keywords

A. Oxide
A. Semiconductors
B. Sputtering
D. Electrical properties

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.materresbull.2012.04.094

Cite this

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title = "In-Ga-Zn-O thin film transistor with HfO 2 gate insulator prepared using various O 2/(Ar + O 2) gas ratios",

abstract = "We have investigated the effect of the deposition of an HfO 2 thin film as a gate insulator with different O 2/(Ar + O 2) gas ratios using RF magnetron sputtering. The HfO 2 thin film affected the device performance of amorphous indium-gallium-zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O 2/(Ar + O 2) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm 2/(V s). Compared to those prepared with an O 2/(Ar + O 2) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm 2/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O 2/(Ar + O 2) gas ratio.",

keywords = "A. Oxide, A. Semiconductors, B. Sputtering, D. Electrical properties",

author = "Jo, {Young Je} and Lee, {In Hwan} and Kwak, {Joon Seop}",

note = "Funding Information: This work was mainly supported by KRF Grant funded by the Korean Government (MEST) (KRF-2007-314-D00168), and was also partially supported by the IT R&D program of MKE/KEIT [KI002182]. The authors in SCNU acknowledge the support by the WCU program at Sunchon National University.",

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doi = "10.1016/j.materresbull.2012.04.094",

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AU - Lee, In Hwan

AU - Kwak, Joon Seop

N1 - Funding Information: This work was mainly supported by KRF Grant funded by the Korean Government (MEST) (KRF-2007-314-D00168), and was also partially supported by the IT R&D program of MKE/KEIT [KI002182]. The authors in SCNU acknowledge the support by the WCU program at Sunchon National University.

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N2 - We have investigated the effect of the deposition of an HfO 2 thin film as a gate insulator with different O 2/(Ar + O 2) gas ratios using RF magnetron sputtering. The HfO 2 thin film affected the device performance of amorphous indium-gallium-zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O 2/(Ar + O 2) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm 2/(V s). Compared to those prepared with an O 2/(Ar + O 2) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm 2/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O 2/(Ar + O 2) gas ratio.

AB - We have investigated the effect of the deposition of an HfO 2 thin film as a gate insulator with different O 2/(Ar + O 2) gas ratios using RF magnetron sputtering. The HfO 2 thin film affected the device performance of amorphous indium-gallium-zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O 2/(Ar + O 2) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm 2/(V s). Compared to those prepared with an O 2/(Ar + O 2) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm 2/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O 2/(Ar + O 2) gas ratio.

KW - A. Oxide

KW - A. Semiconductors

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KW - D. Electrical properties

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