In-Plane Thermal Conductivity of Polycrystalline Chemical Vapor Deposition Graphene with Controlled Grain Sizes

Woomin Lee, Kenneth David Kihm, Hong Goo Kim, Seungha Shin, Changhyuk Lee, Jae Sung Park, Sosan Cheon, Oh Myoung Kwon, Gyumin Lim, Woorim Lee

Research output: Contribution to journalArticlepeer-review

64 Citations (Scopus)


Manipulation of the chemical vapor deposition graphene synthesis conditions, such as operating P, T, heating/cooling time intervals, and precursor gas concentration ratios (CH4/H2), allowed for synthesis of polycrystalline single-layered graphene with controlled grain sizes. The graphene samples were then suspended on 8 μm diameter patterned holes on a silicon-nitride (Si3N4) substrate, and the in-plane thermal conductivities k(T) for 320 K < T < 510 K were measured to be 2660-1230, 1890-1020, and 680-340 W/m·K for average grain sizes of 4.1, 2.2, and 0.5 μm, respectively, using an opto-thermal Raman technique. Fitting of these data by a simple linear chain model of polycrystalline thermal transport determined k = 5500-1980 W/m·K for single-crystal graphene for the same temperature range above; thus, significant reduction of k was achieved when the grain size was decreased from infinite down to 0.5 μm. Furthermore, detailed elaborations were performed to assess the measurement reliability of k by addressing the hole-edge boundary condition, and the air-convection/radiation losses from the graphene surface.

Original languageEnglish
Pages (from-to)2361-2366
Number of pages6
JournalNano Letters
Issue number4
Publication statusPublished - 2017 Apr 12

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.


  • CVD
  • Graphene
  • grain size effect
  • thermal conductivity

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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