A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.
|Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
|Published - 2018 Mar 1
Bibliographical noteFunding Information:
This work was supported by the NSF Grant No. DMR14-00432, Basic Science Research Program through the NRF of Korea funded by the Ministry of Education (No. 2015R1D1A1A01056614), and a grant from Korea University. P.S. and S.P. acknowledge the U.S. Department of Energy Office of Science, Office of Basic Energy Sciences, under the Award No. DE-FC02-04ER15533 (No. NDRL No. 5200).
© 2018 Author(s).
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry