In-situ detection of c-reactive protein using silicon nanowire field effect transistor

Soon Mook Kwon, Gil Bum Kang, Yong Tae Kim, Young Hwan Kim, Byeong Kwon Ju

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Label-free, sensitive, and real-time c-reactive protein (CRP) sensor was fabricated using p-type silicon nanowire (SiNW) based structures configured as field effect transistors (FET) using the conventional 'top-down' semiconductor processes. The width of SiNWs were distributed 80 nm to 400 nm. Among them to improve signal-to-noise ratio and sensitivity of SiNW FET, 221 nm-SiNW was chosen for biosensing of CRP. Antibody of c-reactive protein (anti-CRP) was immobilized on the SiNW surface through polydimethylsiloxane (PDMS) microfluidic channel for detection of CRP. Specific binding of CRP with anti-CRP on the SiNW surface caused a conductance change of SiNW FET and various injections from 10 and 1 μg/ml to 100 ng/ml solutions of CRP resulted in the conductance changes from 39 and 25 to 16%, respectively. Label-free, in-situ and very sensitive electrical detection of CRP was demonstrated with the prepared SiNW FET.

Original languageEnglish
Pages (from-to)1511-1514
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number2
Publication statusPublished - 2011 Feb


  • Biosensor
  • C-reactive protein
  • Label-free
  • Real-time
  • Silicon nanowire field effect transistor
  • Top-down

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics


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