In situ nanointerconnection for nanoelectronics via direct auto-catalytic lateral growth

Yun Hi Lee, Y. T. Jang, B. K. Ju

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


The lateral reduction of interconnection in nanoelectronics will require a one-dimensional metallic nanointerconnector. This work presents an achievement of the all-chromium (Cr) nanointerconnection architecture, an approach to nanointerconnection, in which both electrodes and connecting lines are realized by the same Cr using the autocatalytic function of Cr without any additional lithography. Especially observed was the time evolution of the directional lateral growth of Cr nanowires using a dc electric field during the in situ growth of Cr nanowires. Finally, it was confirmed that the in situ-grown Cr nanobridge could act as an electrode interconnector due to its good metallic current-voltage characteristics.

Original languageEnglish
Article number173103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2005 Apr 25

Bibliographical note

Funding Information:
This work was supported by the Nano Core Technology Project of the MOST(III) in Korea and partially, KRF project (KRF-2004-005-C00060).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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