In situ nanointerconnection for nanoelectronics via direct auto-catalytic lateral growth

Yun Hi Lee; Y. T. Jang; B. K. Ju

doi:10.1063/1.1915530

In situ nanointerconnection for nanoelectronics via direct auto-catalytic lateral growth

Yun Hi Lee, Y. T. Jang, B. K. Ju

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The lateral reduction of interconnection in nanoelectronics will require a one-dimensional metallic nanointerconnector. This work presents an achievement of the all-chromium (Cr) nanointerconnection architecture, an approach to nanointerconnection, in which both electrodes and connecting lines are realized by the same Cr using the autocatalytic function of Cr without any additional lithography. Especially observed was the time evolution of the directional lateral growth of Cr nanowires using a dc electric field during the in situ growth of Cr nanowires. Finally, it was confirmed that the in situ-grown Cr nanobridge could act as an electrode interconnector due to its good metallic current-voltage characteristics.

Original language	English
Article number	173103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	17
DOIs	https://doi.org/10.1063/1.1915530
Publication status	Published - 2005 Apr 25

Bibliographical note

Funding Information:
This work was supported by the Nano Core Technology Project of the MOST(III) in Korea and partially, KRF project (KRF-2004-005-C00060).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1915530

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abstract = "The lateral reduction of interconnection in nanoelectronics will require a one-dimensional metallic nanointerconnector. This work presents an achievement of the all-chromium (Cr) nanointerconnection architecture, an approach to nanointerconnection, in which both electrodes and connecting lines are realized by the same Cr using the autocatalytic function of Cr without any additional lithography. Especially observed was the time evolution of the directional lateral growth of Cr nanowires using a dc electric field during the in situ growth of Cr nanowires. Finally, it was confirmed that the in situ-grown Cr nanobridge could act as an electrode interconnector due to its good metallic current-voltage characteristics.",

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AU - Ju, B. K.

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AB - The lateral reduction of interconnection in nanoelectronics will require a one-dimensional metallic nanointerconnector. This work presents an achievement of the all-chromium (Cr) nanointerconnection architecture, an approach to nanointerconnection, in which both electrodes and connecting lines are realized by the same Cr using the autocatalytic function of Cr without any additional lithography. Especially observed was the time evolution of the directional lateral growth of Cr nanowires using a dc electric field during the in situ growth of Cr nanowires. Finally, it was confirmed that the in situ-grown Cr nanobridge could act as an electrode interconnector due to its good metallic current-voltage characteristics.

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In situ nanointerconnection for nanoelectronics via direct auto-catalytic lateral growth

Abstract

Bibliographical note

ASJC Scopus subject areas

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