In-situ phosphorus doping on Si1-xGex epitaxial growth in the SiH4 - GeH4 - PH3 gas system by using LPCVD

Cheol Jin Lee; Takashi Matsuura; Junichi Murota

doi:10.1109/IMNC.1998.729935

In-situ phosphorus doping on Si_1-xGe_x epitaxial growth in the SiH₄ - GeH₄ - PH₃ gas system by using LPCVD

Cheol Jin Lee, Takashi Matsuura, Junichi Murota

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 1998
Subtitle of host publication	1998 International Microprocesses and Nanotechnology Conference
Editors	Hyung Joon Yoo, Shinji Okazaki, Jinho Ahn, Ohyun Kim, Masanori Komuro
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	31-32
Number of pages	2
Volume	1998-July
ISBN (Electronic)	4930813832, 9784930813831
DOIs	https://doi.org/10.1109/IMNC.1998.729935
Publication status	Published - 1998 Jan 1
Externally published	Yes
Event	1998 International Microprocesses and Nanotechnology Conference, MNC 1998 - Kyoungju, Korea, Republic of Duration: 1998 Jul 13 → 1998 Jul 16

Other

Other	1998 International Microprocesses and Nanotechnology Conference, MNC 1998
Country/Territory	Korea, Republic of
City	Kyoungju
Period	98/7/13 → 98/7/16

ASJC Scopus subject areas

Materials Science(all)
Nuclear and High Energy Physics
Computer Science Applications

Access to Document

10.1109/IMNC.1998.729935

Cite this

Lee, C. J., Matsuura, T., & Murota, J. (1998). In-situ phosphorus doping on Si_1-xGe_x epitaxial growth in the SiH₄ - GeH₄ - PH₃ gas system by using LPCVD. In H. J. Yoo, S. Okazaki, J. Ahn, O. Kim, & M. Komuro (Eds.), Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference (Vol. 1998-July, pp. 31-32). [729935] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.1998.729935

In-situ phosphorus doping on Si_1-xGe_x epitaxial growth in the SiH₄ - GeH₄ - PH₃ gas system by using LPCVD. / Lee, Cheol Jin; Matsuura, Takashi; Murota, Junichi.
Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference. ed. / Hyung Joon Yoo; Shinji Okazaki; Jinho Ahn; Ohyun Kim; Masanori Komuro. Vol. 1998-July Institute of Electrical and Electronics Engineers Inc., 1998. p. 31-32 729935.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, CJ, Matsuura, T & Murota, J 1998, In-situ phosphorus doping on Si_1-xGe_x epitaxial growth in the SiH₄ - GeH₄ - PH₃ gas system by using LPCVD. in HJ Yoo, S Okazaki, J Ahn, O Kim & M Komuro (eds), Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference. vol. 1998-July, 729935, Institute of Electrical and Electronics Engineers Inc., pp. 31-32, 1998 International Microprocesses and Nanotechnology Conference, MNC 1998, Kyoungju, Korea, Republic of, 98/7/13. https://doi.org/10.1109/IMNC.1998.729935

Lee CJ, Matsuura T, Murota J. In-situ phosphorus doping on Si_1-xGe_x epitaxial growth in the SiH₄ - GeH₄ - PH₃ gas system by using LPCVD. In Yoo HJ, Okazaki S, Ahn J, Kim O, Komuro M, editors, Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference. Vol. 1998-July. Institute of Electrical and Electronics Engineers Inc. 1998. p. 31-32. 729935 doi: 10.1109/IMNC.1998.729935

Lee, Cheol Jin ; Matsuura, Takashi ; Murota, Junichi. / In-situ phosphorus doping on Si_1-xGe_x epitaxial growth in the SiH₄ - GeH₄ - PH₃ gas system by using LPCVD. Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference. editor / Hyung Joon Yoo ; Shinji Okazaki ; Jinho Ahn ; Ohyun Kim ; Masanori Komuro. Vol. 1998-July Institute of Electrical and Electronics Engineers Inc., 1998. pp. 31-32

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