In situ repair of high-performance, flexible nanocrystal electronics for large-area fabrication and operation in air

Ji Hyuk Choi, Soong Ju Oh, Yuming Lai, David K. Kim, Tianshuo Zhao, Aaron T. Fafarman, Benjamin T. Diroll, Christopher B. Murray, Cherie R. Kagan

Research output: Contribution to journalArticlepeer-review

50 Citations (Scopus)

Abstract

Colloidal semiconductor nanocrystal (NC) thin films have been integrated in light-emitting diodes, solar cells, field-effect transistors (FETs), and flexible, electronic circuits. However, NC devices are typically fabricated and operated in an inert environment since the reactive surface and high surface-to-volume ratio of NC materials render them sensitive to oxygen, water, and many solvents. This sensitivity has limited device scaling and large-scale device integration achievable by conventional fabrication technologies, which generally require ambient air and wet-chemical processing. Here, we present a simple, effective route to reverse the detrimental effects of chemical and environmental exposure, by incorporating, in situ, a chemical agent, namely, indium metal, which is thermally triggered to diffuse and repair the damage. Taking advantage of the recovery process, CdSe NC FETs are processed in air, patterned using the solvents of lithography, and packaged by atomic layer deposition to form large-area and flexible high-performance NC devices that operate stably in air.

Original languageEnglish
Pages (from-to)8275-8283
Number of pages9
JournalACS nano
Volume7
Issue number9
DOIs
Publication statusPublished - 2013 Sept 24
Externally publishedYes

Keywords

  • cadmium selenide
  • encapsulation
  • field-effect transistor
  • flexible electronics
  • nanocrystal
  • passivation
  • recovery

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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