Abstract
We fabricated highly aligned porous silicon carbide (SiC) ceramics decorated with SiC nanowires by the unidirectional freeze casting of SiC/camphene slurries with various polycarbosilane (PCS) contents, ranging from 0 to 20 wt% in relation to the SiC powders, in which the PCS preceramic was used as a binder and source for the in situ growth of the SiC nanowires. In this method, aligned pore channels were formed as a replica of the unidirectionally grown camphene dendrites, while SiC nanowires were formed within the pores in situ via a vapor-liquid-solid (VLS) mechanism during the heat treatment of the porous green bodies at 1400°C for 1 h in a flowing Ar atmosphere. The pore channels were well decorated with single-crystalline SiC nanowires. It was also observed that the growth of the SiC nanowires was strongly affected by the initial PCS content and heat-treatment temperature.
Original language | English |
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Pages (from-to) | 3759-3766 |
Number of pages | 8 |
Journal | Journal of the American Ceramic Society |
Volume | 90 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2007 Dec |
Externally published | Yes |
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry