In situ thickness control of black phosphorus field-effect transistors via ozone treatment

Suhyun Kim, Younghun Jung, Jong Young Lee, Gwan Hyoung Lee, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


A simple and reproducible method to control the thickness of black phosphorus flakes in real time using a UV/ozone treatment is demonstrated. Back-gated black phosphorus field-effect transistors (FETs) were fabricated using thick black phosphorus flakes obtained by thinning of black phosphorus, as oxygen radicals generated by UV irradiation formed phosphorus oxides on the surface. In order to monitor the thickness effect on the electrical properties, the fabricated FETs were loaded in the UV/ozone chamber, where both the optical (micro-Raman spectroscopy and optical microscopy) and electrical properties (current–voltage characteristics) were monitored in situ. We observed an intensity decrease of the Raman modes of black phosphorus while the field-effect mobility and on/off ratio increased by 48% and 6,800%, respectively. The instability in ambient air limits the investigation and implementation of ultra-thin black phosphorus. However, the method reported in this study allowed us to start with thick black phosphorous flakes, providing a reliable approach for optimizing the electrical performance of black phosphorus-based electronic devices. We believe that these results can motivate further studies using mono- and few-layer black phosphorus. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)3056-3065
Number of pages10
JournalNano Research
Issue number10
Publication statusPublished - 2016 Oct 1

Bibliographical note

Publisher Copyright:
© 2016, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.


  • UV/ozone treatment
  • black phosphorus
  • in situ thinning

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • General Materials Science
  • Electrical and Electronic Engineering


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