InAs/GaAs quantum-dot laser diode lasing at 1.3 μm with triple-stacked-layer dots-in-a-well structure grown by atomic layer epitaxy

Kwang Woong Kim; Nam Ki Cho; Sung Phil Ryu; Jin Dong Song; Won Jun Choi; Jung Il Lee; Jung Ho Park

doi:10.1143/JJAP.45.8010

InAs/GaAs quantum-dot laser diode lasing at 1.3 μm with triple-stacked-layer dots-in-a-well structure grown by atomic layer epitaxy

Kwang Woong Kim, Nam Ki Cho, Sung Phil Ryu, Jin Dong Song, Won Jun Choi, Jung Il Lee, Jung Ho Park

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We report the first demonstration of room-temperature (RT) lasing at 1.3 μm from the ground state of three-stacked InAs quantum dots (QDs) in an In_0.85Ga_0.85As quantum well, which was grown by atomic layer epitaxy (ALE). For an as-cleaved device with a 2000-um-long × 15-μm-wide ridge structure, the threshold current density (J_th) at RT is 1.55 A/cm² with the ground state lasing at 1310 nm under pulsed operation. The thermal coefficient of a lasing wavelength shift is 0.53 nm/K and the characteristic temperature is 103 K near RT. The lasing wavelength of the QD laser diodes (LDs) shows simultaneous lasing and the state switching from the ground state at 1310nm and to the first excited state at 1232nm with increasing injection current owing to the gain saturation of the ground state. The performance of ALE QD-LD is comparable to that of the conventional Stranski-Krastanov QD-LD.

Original language	English
Pages (from-to)	8010-8013
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	10 A
DOIs	https://doi.org/10.1143/JJAP.45.8010
Publication status	Published - 2006 Oct 15

Keywords

Atomic layer epitaxy
Inas/gaas quantum dot
Laser diode
Simultaneous lasing

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.45.8010

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Kim, K. W., Cho, N. K., Ryu, S. P., Song, J. D., Choi, W. J., Lee, J. I., & Park, J. H. (2006). InAs/GaAs quantum-dot laser diode lasing at 1.3 μm with triple-stacked-layer dots-in-a-well structure grown by atomic layer epitaxy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(10 A), 8010-8013. https://doi.org/10.1143/JJAP.45.8010

InAs/GaAs quantum-dot laser diode lasing at 1.3 μm with triple-stacked-layer dots-in-a-well structure grown by atomic layer epitaxy. / Kim, Kwang Woong; Cho, Nam Ki; Ryu, Sung Phil et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 10 A, 15.10.2006, p. 8010-8013.

Research output: Contribution to journal › Article › peer-review

Kim, KW, Cho, NK, Ryu, SP, Song, JD, Choi, WJ, Lee, JI & Park, JH 2006, 'InAs/GaAs quantum-dot laser diode lasing at 1.3 μm with triple-stacked-layer dots-in-a-well structure grown by atomic layer epitaxy', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 10 A, pp. 8010-8013. https://doi.org/10.1143/JJAP.45.8010

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title = "InAs/GaAs quantum-dot laser diode lasing at 1.3 μm with triple-stacked-layer dots-in-a-well structure grown by atomic layer epitaxy",

abstract = "We report the first demonstration of room-temperature (RT) lasing at 1.3 μm from the ground state of three-stacked InAs quantum dots (QDs) in an In0.85Ga0.85As quantum well, which was grown by atomic layer epitaxy (ALE). For an as-cleaved device with a 2000-um-long × 15-μm-wide ridge structure, the threshold current density (Jth) at RT is 1.55 A/cm2 with the ground state lasing at 1310 nm under pulsed operation. The thermal coefficient of a lasing wavelength shift is 0.53 nm/K and the characteristic temperature is 103 K near RT. The lasing wavelength of the QD laser diodes (LDs) shows simultaneous lasing and the state switching from the ground state at 1310nm and to the first excited state at 1232nm with increasing injection current owing to the gain saturation of the ground state. The performance of ALE QD-LD is comparable to that of the conventional Stranski-Krastanov QD-LD.",

keywords = "Atomic layer epitaxy, Inas/gaas quantum dot, Laser diode, Simultaneous lasing",

author = "Kim, {Kwang Woong} and Cho, {Nam Ki} and Ryu, {Sung Phil} and Song, {Jin Dong} and Choi, {Won Jun} and Lee, {Jung Il} and Park, {Jung Ho}",

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doi = "10.1143/JJAP.45.8010",

language = "English",

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AU - Kim, Kwang Woong

AU - Cho, Nam Ki

AU - Ryu, Sung Phil

AU - Song, Jin Dong

AU - Choi, Won Jun

AU - Lee, Jung Il

AU - Park, Jung Ho

PY - 2006/10/15

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N2 - We report the first demonstration of room-temperature (RT) lasing at 1.3 μm from the ground state of three-stacked InAs quantum dots (QDs) in an In0.85Ga0.85As quantum well, which was grown by atomic layer epitaxy (ALE). For an as-cleaved device with a 2000-um-long × 15-μm-wide ridge structure, the threshold current density (Jth) at RT is 1.55 A/cm2 with the ground state lasing at 1310 nm under pulsed operation. The thermal coefficient of a lasing wavelength shift is 0.53 nm/K and the characteristic temperature is 103 K near RT. The lasing wavelength of the QD laser diodes (LDs) shows simultaneous lasing and the state switching from the ground state at 1310nm and to the first excited state at 1232nm with increasing injection current owing to the gain saturation of the ground state. The performance of ALE QD-LD is comparable to that of the conventional Stranski-Krastanov QD-LD.

AB - We report the first demonstration of room-temperature (RT) lasing at 1.3 μm from the ground state of three-stacked InAs quantum dots (QDs) in an In0.85Ga0.85As quantum well, which was grown by atomic layer epitaxy (ALE). For an as-cleaved device with a 2000-um-long × 15-μm-wide ridge structure, the threshold current density (Jth) at RT is 1.55 A/cm2 with the ground state lasing at 1310 nm under pulsed operation. The thermal coefficient of a lasing wavelength shift is 0.53 nm/K and the characteristic temperature is 103 K near RT. The lasing wavelength of the QD laser diodes (LDs) shows simultaneous lasing and the state switching from the ground state at 1310nm and to the first excited state at 1232nm with increasing injection current owing to the gain saturation of the ground state. The performance of ALE QD-LD is comparable to that of the conventional Stranski-Krastanov QD-LD.

KW - Atomic layer epitaxy

KW - Inas/gaas quantum dot

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KW - Simultaneous lasing

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InAs/GaAs quantum-dot laser diode lasing at 1.3 μm with triple-stacked-layer dots-in-a-well structure grown by atomic layer epitaxy

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