InAsP phase formations during the growth of a GalnAsP/lnP distributed feedback laser diode structure on corrugated lnP using metalorganic vapor phase epitaxy

Dong Hoon Jang; Jeong Soo Kim; Kyung Hyun Park; Sahn Nahm; Seung Won Lee; Jung Kee Lee; Ho Sung Cho; Hong Man Kim; Hyung Moo Park

doi:10.1063/1.113719

InAsP phase formations during the growth of a GalnAsP/lnP distributed feedback laser diode structure on corrugated lnP using metalorganic vapor phase epitaxy

Dong Hoon Jang, Jeong Soo Kim, Kyung Hyun Park, Sahn Nahm, Seung Won Lee, Jung Kee Lee, Ho Sung Cho, Hong Man Kim, Hyung Moo Park

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

An InAsP phase formed during the heatup time to the growth temperature of MOVPE was investigated by transmission electron microscopy and energy dispersive spectroscopy. The thickness of the InAsP phase on the concave regions of corrugation is increased with increased AsH₃ partial pressure and heat-up time. The arsenic composition in InAsP was also increased with the increase of AsH₃ partial pressure during the heat-up time. Dislocations and defects were not generated below an AsH₃ partial pressure of 2.4×10^-3 Torr, although strain was induced according to the thickness and composition of InAsP formed on the concave regions of corrugation.

Original language	English
Pages (from-to)	3191
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113719
Publication status	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{e448c473b42a4c08a272946978a397dd,

title = "InAsP phase formations during the growth of a GalnAsP/lnP distributed feedback laser diode structure on corrugated lnP using metalorganic vapor phase epitaxy",

abstract = "An InAsP phase formed during the heatup time to the growth temperature of MOVPE was investigated by transmission electron microscopy and energy dispersive spectroscopy. The thickness of the InAsP phase on the concave regions of corrugation is increased with increased AsH3 partial pressure and heat-up time. The arsenic composition in InAsP was also increased with the increase of AsH3 partial pressure during the heat-up time. Dislocations and defects were not generated below an AsH3 partial pressure of 2.4×10-3 Torr, although strain was induced according to the thickness and composition of InAsP formed on the concave regions of corrugation.",

author = "Jang, {Dong Hoon} and Kim, {Jeong Soo} and Park, {Kyung Hyun} and Sahn Nahm and Lee, {Seung Won} and Lee, {Jung Kee} and Cho, {Ho Sung} and Kim, {Hong Man} and Park, {Hyung Moo}",

year = "1995",

doi = "10.1063/1.113719",

language = "English",

pages = "3191",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - InAsP phase formations during the growth of a GalnAsP/lnP distributed feedback laser diode structure on corrugated lnP using metalorganic vapor phase epitaxy

AU - Jang, Dong Hoon

AU - Kim, Jeong Soo

AU - Park, Kyung Hyun

AU - Nahm, Sahn

AU - Lee, Seung Won

AU - Lee, Jung Kee

AU - Cho, Ho Sung

AU - Kim, Hong Man

AU - Park, Hyung Moo

PY - 1995

Y1 - 1995

N2 - An InAsP phase formed during the heatup time to the growth temperature of MOVPE was investigated by transmission electron microscopy and energy dispersive spectroscopy. The thickness of the InAsP phase on the concave regions of corrugation is increased with increased AsH3 partial pressure and heat-up time. The arsenic composition in InAsP was also increased with the increase of AsH3 partial pressure during the heat-up time. Dislocations and defects were not generated below an AsH3 partial pressure of 2.4×10-3 Torr, although strain was induced according to the thickness and composition of InAsP formed on the concave regions of corrugation.

AB - An InAsP phase formed during the heatup time to the growth temperature of MOVPE was investigated by transmission electron microscopy and energy dispersive spectroscopy. The thickness of the InAsP phase on the concave regions of corrugation is increased with increased AsH3 partial pressure and heat-up time. The arsenic composition in InAsP was also increased with the increase of AsH3 partial pressure during the heat-up time. Dislocations and defects were not generated below an AsH3 partial pressure of 2.4×10-3 Torr, although strain was induced according to the thickness and composition of InAsP formed on the concave regions of corrugation.

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U2 - 10.1063/1.113719

DO - 10.1063/1.113719

M3 - Article

AN - SCOPUS:0029636646

SN - 0003-6951

SP - 3191

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

InAsP phase formations during the growth of a GalnAsP/lnP distributed feedback laser diode structure on corrugated lnP using metalorganic vapor phase epitaxy

Abstract

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