Incorporation of hydroxyl ions and protons in oxide ion vacancies in nanoscale yttria stabilized zirconia during atomic layer deposition

Kyung Sik Son, Min Young Bae, Kiho Bae, Jeong Sook Ha, Joon Hyung Shim

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    This work provides a direct evidence that protons are incorporated in yttria stabilized zirconia (YSZ) deposited by atomic layer deposition (ALD) during fabrication of films not from ambient water after deposition. Oxydant made of proton isotopes or deutrium is used as a tracer of proton incorporation during the synthesis and the time-of-flight secondary mass ion mass spectrometry (TOF-SIMS) has been condcuted to conduct depth profiling. As a result, we have identified that protons or deutrium ions introduced during deposition truly favor to reside in the ALD YSZ layers and that concentration of protons incorporated during ALD is related to concentration of yttrium.

    Original languageEnglish
    Title of host publicationIonic and Mixed Conducting Ceramics 8
    PublisherElectrochemical Society Inc.
    Pages155-160
    Number of pages6
    Edition1
    ISBN (Electronic)9781623320201
    ISBN (Print)9781566779531
    DOIs
    Publication statusPublished - 2012
    EventIonic and Mixed Conducting Ceramics 8 - 221st ECS Meeting - Seattle, WA, United States
    Duration: 2012 May 62012 May 10

    Publication series

    NameECS Transactions
    Number1
    Volume45
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    OtherIonic and Mixed Conducting Ceramics 8 - 221st ECS Meeting
    Country/TerritoryUnited States
    CitySeattle, WA
    Period12/5/612/5/10

    ASJC Scopus subject areas

    • General Engineering

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