Abstract
The development of high performance, solution-processed metal-oxide semiconductors has been of paramount interest in various fields of electronic applications. Among the variety of methodologies for synthesizing solution-processed precursor solutions, the combustion chemistry reaction, which involves an internal exothermic heat reaction, has drawn a tremendous amount of attraction as one of the most viable chemical approaches. In this paper, we report the synthesis of new zinc-tin oxide (ZTO) precursor solutions that can be used to independently adjust the amount of combustive exothermic heat. Through comparative analyses based on X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and X-ray absorption spectroscopy, the independent influence of combustive heat is elucidated in indium-free, solution-processed oxide semiconductors, in conjunction with an interpretation of observed variations in the device performance.
| Original language | English |
|---|---|
| Pages (from-to) | 1457-1462 |
| Number of pages | 6 |
| Journal | Journal of Materials Chemistry C |
| Volume | 3 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2015 Feb 21 |
Bibliographical note
Publisher Copyright:© The Royal Society of Chemistry 2015.
ASJC Scopus subject areas
- General Chemistry
- Materials Chemistry