Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots

Ho Sung Kim; Min Su Park; Sang Hyeon Kim; Suk In Park; Jin Dong Song; Sang Hyuck Kim; Won Jun Choi; Jung Ho Park

doi:10.1016/j.tsf.2016.03.025

Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots

Ho Sung Kim, Min Su Park, Sang Hyeon Kim, Suk In Park, Jin Dong Song, Sang Hyuck Kim, Won Jun Choi, Jung Ho Park

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report the electrical and optical characteristics of indium-tin-oxide (ITO)/GaAs Schottky barrier solar cells (SBSCs) with embedded InAs quantum dots (QDs). Twenty layers of self-assembled InAs QDs are inserted into the SBSCs so as to increase the potential barrier height at the ITO/GaAs junctions and to create additional photo-generated electrons in the quantum confined states of the QDs. After analyzing the current density-voltage characteristics, the photoluminescence, and the external quantum efficiency of the fabricated SBSCs, it was found that the incorporation of InAs QDs into the ITO/GaAs SBSCs results in an increase of both of the open-circuit voltage and the short-circuit current density compared to SBSCs without InAs QDs.

Original language	English
Pages (from-to)	81-84
Number of pages	4
Journal	Thin Solid Films
Volume	604
DOIs	https://doi.org/10.1016/j.tsf.2016.03.025
Publication status	Published - 2016 Apr 1

Bibliographical note

Funding Information:
This research was supported by the Agency for Defense Development (ADD) of the Republic of Korea, the Seoul R&BD Program ( WR080951 ), the Brain Korea 21 Plus Project in 2016 and was also supported by the KIST institutional program.

Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved..

Keywords

Gallium Arsenide
Indium Arsenide
Indiun tin oxide
Quantum dots
Schottky barrier
Solar cells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2016.03.025

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title = "Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots",

abstract = "We report the electrical and optical characteristics of indium-tin-oxide (ITO)/GaAs Schottky barrier solar cells (SBSCs) with embedded InAs quantum dots (QDs). Twenty layers of self-assembled InAs QDs are inserted into the SBSCs so as to increase the potential barrier height at the ITO/GaAs junctions and to create additional photo-generated electrons in the quantum confined states of the QDs. After analyzing the current density-voltage characteristics, the photoluminescence, and the external quantum efficiency of the fabricated SBSCs, it was found that the incorporation of InAs QDs into the ITO/GaAs SBSCs results in an increase of both of the open-circuit voltage and the short-circuit current density compared to SBSCs without InAs QDs.",

keywords = "Gallium Arsenide, Indium Arsenide, Indiun tin oxide, Quantum dots, Schottky barrier, Solar cells",

author = "Kim, {Ho Sung} and Park, {Min Su} and Kim, {Sang Hyeon} and Park, {Suk In} and Song, {Jin Dong} and Kim, {Sang Hyuck} and Choi, {Won Jun} and Park, {Jung Ho}",

note = "Funding Information: This research was supported by the Agency for Defense Development (ADD) of the Republic of Korea, the Seoul R&BD Program ( WR080951 ), the Brain Korea 21 Plus Project in 2016 and was also supported by the KIST institutional program. Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. All rights reserved..",

year = "2016",

month = apr,

day = "1",

doi = "10.1016/j.tsf.2016.03.025",

language = "English",

volume = "604",

pages = "81--84",

journal = "Thin Solid Films",

issn = "0040-6090",

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TY - JOUR

T1 - Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots

AU - Kim, Ho Sung

AU - Park, Min Su

AU - Kim, Sang Hyeon

AU - Park, Suk In

AU - Song, Jin Dong

AU - Kim, Sang Hyuck

AU - Choi, Won Jun

AU - Park, Jung Ho

N1 - Funding Information: This research was supported by the Agency for Defense Development (ADD) of the Republic of Korea, the Seoul R&BD Program ( WR080951 ), the Brain Korea 21 Plus Project in 2016 and was also supported by the KIST institutional program. Publisher Copyright: © 2016 Elsevier B.V. All rights reserved..

PY - 2016/4/1

Y1 - 2016/4/1

N2 - We report the electrical and optical characteristics of indium-tin-oxide (ITO)/GaAs Schottky barrier solar cells (SBSCs) with embedded InAs quantum dots (QDs). Twenty layers of self-assembled InAs QDs are inserted into the SBSCs so as to increase the potential barrier height at the ITO/GaAs junctions and to create additional photo-generated electrons in the quantum confined states of the QDs. After analyzing the current density-voltage characteristics, the photoluminescence, and the external quantum efficiency of the fabricated SBSCs, it was found that the incorporation of InAs QDs into the ITO/GaAs SBSCs results in an increase of both of the open-circuit voltage and the short-circuit current density compared to SBSCs without InAs QDs.

AB - We report the electrical and optical characteristics of indium-tin-oxide (ITO)/GaAs Schottky barrier solar cells (SBSCs) with embedded InAs quantum dots (QDs). Twenty layers of self-assembled InAs QDs are inserted into the SBSCs so as to increase the potential barrier height at the ITO/GaAs junctions and to create additional photo-generated electrons in the quantum confined states of the QDs. After analyzing the current density-voltage characteristics, the photoluminescence, and the external quantum efficiency of the fabricated SBSCs, it was found that the incorporation of InAs QDs into the ITO/GaAs SBSCs results in an increase of both of the open-circuit voltage and the short-circuit current density compared to SBSCs without InAs QDs.

KW - Gallium Arsenide

KW - Indium Arsenide

KW - Indiun tin oxide

KW - Quantum dots

KW - Schottky barrier

KW - Solar cells

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DO - 10.1016/j.tsf.2016.03.025

M3 - Article

AN - SCOPUS:84962266879

SN - 0040-6090

VL - 604

SP - 81

EP - 84

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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