Indium-tin oxide/Si contacts with In- and Sn-diffusion barriers in polycrystalline Si thin-film transistor liquid-crystal displays

Hojin Ryu; Jinmo Kang; Younggun Han; Donghwan Kim; James Jungho Pak; Won Kyu Park; Myoung Su Yang

doi:10.1007/s11664-003-0223-y

Indium-tin oxide/Si contacts with In- and Sn-diffusion barriers in polycrystalline Si thin-film transistor liquid-crystal displays

Hojin Ryu, Jinmo Kang, Younggun Han, Donghwan Kim, James Jungho Pak, Won Kyu Park, Myoung Su Yang

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Indium and tin were used as the diffusion barrier between indium-tin oxide (ITO) and polycrystalline-silicon layers to reduce the contact resistance. The ITO/Si contacts may be adopted in thin-film transistor liquid-crystal displays (TFT-LCD) to reduce the number of fabrication steps. With In and Sn layers, contact-resistance values of 5 × 10^-3-4 × 10^-3 Ωcm² were obtained. These values were higher than those of the conventional ITO/Mo/Al/Si contacts (3 × 10^-5-4 × 10^-4 Ωcm²)but lower than the values obtained from ITO/Si contacts (about 1 × 10^-2 Ωcm²). The Sn was stable after annealing, but In diffused into Si and lost its function as the diffusion barrier.

Original language	English
Pages (from-to)	919-924
Number of pages	6
Journal	Journal of Electronic Materials
Volume	32
Issue number	9
DOIs	https://doi.org/10.1007/s11664-003-0223-y
Publication status	Published - 2003 Sept

Keywords

Contact resistance
Diffusion barrier
ITO
In
Poly-Si
Sn
TFT-LCD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-003-0223-y

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title = "Indium-tin oxide/Si contacts with In- and Sn-diffusion barriers in polycrystalline Si thin-film transistor liquid-crystal displays",

abstract = "Indium and tin were used as the diffusion barrier between indium-tin oxide (ITO) and polycrystalline-silicon layers to reduce the contact resistance. The ITO/Si contacts may be adopted in thin-film transistor liquid-crystal displays (TFT-LCD) to reduce the number of fabrication steps. With In and Sn layers, contact-resistance values of 5 × 10-3-4 × 10-3 Ωcm2 were obtained. These values were higher than those of the conventional ITO/Mo/Al/Si contacts (3 × 10-5-4 × 10-4 Ωcm2)but lower than the values obtained from ITO/Si contacts (about 1 × 10-2 Ωcm2). The Sn was stable after annealing, but In diffused into Si and lost its function as the diffusion barrier.",

keywords = "Contact resistance, Diffusion barrier, ITO, In, Poly-Si, Sn, TFT-LCD",

author = "Hojin Ryu and Jinmo Kang and Younggun Han and Donghwan Kim and Pak, {James Jungho} and Park, {Won Kyu} and Yang, {Myoung Su}",

note = "Funding Information: This work was supported by Grant No. R01-2001-00280 from the Basic Research Program of the KOSEF.",

year = "2003",

month = sep,

doi = "10.1007/s11664-003-0223-y",

language = "English",

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pages = "919--924",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Indium-tin oxide/Si contacts with In- and Sn-diffusion barriers in polycrystalline Si thin-film transistor liquid-crystal displays

AU - Ryu, Hojin

AU - Kang, Jinmo

AU - Han, Younggun

AU - Kim, Donghwan

AU - Pak, James Jungho

AU - Park, Won Kyu

AU - Yang, Myoung Su

N1 - Funding Information: This work was supported by Grant No. R01-2001-00280 from the Basic Research Program of the KOSEF.

PY - 2003/9

Y1 - 2003/9

N2 - Indium and tin were used as the diffusion barrier between indium-tin oxide (ITO) and polycrystalline-silicon layers to reduce the contact resistance. The ITO/Si contacts may be adopted in thin-film transistor liquid-crystal displays (TFT-LCD) to reduce the number of fabrication steps. With In and Sn layers, contact-resistance values of 5 × 10-3-4 × 10-3 Ωcm2 were obtained. These values were higher than those of the conventional ITO/Mo/Al/Si contacts (3 × 10-5-4 × 10-4 Ωcm2)but lower than the values obtained from ITO/Si contacts (about 1 × 10-2 Ωcm2). The Sn was stable after annealing, but In diffused into Si and lost its function as the diffusion barrier.

AB - Indium and tin were used as the diffusion barrier between indium-tin oxide (ITO) and polycrystalline-silicon layers to reduce the contact resistance. The ITO/Si contacts may be adopted in thin-film transistor liquid-crystal displays (TFT-LCD) to reduce the number of fabrication steps. With In and Sn layers, contact-resistance values of 5 × 10-3-4 × 10-3 Ωcm2 were obtained. These values were higher than those of the conventional ITO/Mo/Al/Si contacts (3 × 10-5-4 × 10-4 Ωcm2)but lower than the values obtained from ITO/Si contacts (about 1 × 10-2 Ωcm2). The Sn was stable after annealing, but In diffused into Si and lost its function as the diffusion barrier.

KW - Contact resistance

KW - Diffusion barrier

KW - ITO

KW - In

KW - Poly-Si

KW - Sn

KW - TFT-LCD

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U2 - 10.1007/s11664-003-0223-y

DO - 10.1007/s11664-003-0223-y

M3 - Article

AN - SCOPUS:0141818244

SN - 0361-5235

VL - 32

SP - 919

EP - 924

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

Indium-tin oxide/Si contacts with In- and Sn-diffusion barriers in polycrystalline Si thin-film transistor liquid-crystal displays

Abstract

Keywords

ASJC Scopus subject areas

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