Induction heating effect on the performance of flexible MoS2 field-effect transistors

Jong Mok Shin, Jun Hee Choi, Do Hyun Kim, Ho Kyun Jang, Jinyoung Yun, Junhong Na, Gyu Tae Kim

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6 Citations (Scopus)


We investigated the induction heating effect on device characteristics of flexible molybdenum disulfide (MoS2) field-effect transistors (FETs). A polyimide film was employed as a flexible substrate, and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate was coated on the flexible substrate as a bottom gate. After the annealing process on the flexible MoS2 FETs by induction heating, the field effect mobility was enhanced from 2.13 to 5.58 cm2/V·s with the slight increase of the on-off ratio from 5.17 × 102 to 1.98 × 103. Moreover, the low field mobility was almost unchanged from 7.75 to 7.33 cm2/V·s, indicating that the induction heating mainly contributed to the enhancement of the device performances by contact improvement between electrodes and MoS2. With the simple model of the diode and resistor connected in series, it was confirmed that the Schottky diode disappeared with contact enhancement. Our findings can contribute to the contact improvement with minimum damage when low dimensional nanomaterials are used as channel materials on flexible substrates.

Original languageEnglish
Article number153105
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2017 Oct 9

Bibliographical note

Funding Information:
This work was supported by a grant to Terahertz Electronic Device Research Laboratory funded by Defense Acquisition Program Administration and by Agency for Defense Development (UD150043RD).

Publisher Copyright:
© 2017 Author(s).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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