Induction heating effect on the performance of flexible MoS₂ field-effect transistors

We investigated the induction heating effect on device characteristics of flexible molybdenum disulfide (MoS₂) field-effect transistors (FETs). A polyimide film was employed as a flexible substrate, and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate was coated on the flexible substrate as a bottom gate. After the annealing process on the flexible MoS₂ FETs by induction heating, the field effect mobility was enhanced from 2.13 to 5.58 cm²/V·s with the slight increase of the on-off ratio from 5.17 × 10² to 1.98 × 10³. Moreover, the low field mobility was almost unchanged from 7.75 to 7.33 cm²/V·s, indicating that the induction heating mainly contributed to the enhancement of the device performances by contact improvement between electrodes and MoS₂. With the simple model of the diode and resistor connected in series, it was confirmed that the Schottky diode disappeared with contact enhancement. Our findings can contribute to the contact improvement with minimum damage when low dimensional nanomaterials are used as channel materials on flexible substrates.