Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

Byung Jae Kim; Michael A. Mastro; Hyunjung Jung; Hong Yeol Kim; Sung Hyun Kim; Ron T. Holm; Jennifer Hite; Charles R. Eddy; Joona Bang; Jihyun Kim

doi:10.1016/j.tsf.2008.05.046

Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

Byung Jae Kim, Michael A. Mastro, Hyunjung Jung, Hong Yeol Kim, Sung Hyun Kim, Ron T. Holm, Jennifer Hite, Charles R. Eddy, Joona Bang, Jihyun Kim

Research output: Contribution to journal › Letter › peer-review

23 Citations (Scopus)

Abstract

The flip-chip configuration is employed for the production of high-brightness GaN-based light emitting diodes to improve the extraction of heat. A lithographic approach based on a sacrificial SiO₂ nanosphere etch mask was developed to enhance the external extraction of light from the sapphire substrate. Closed-packed arrays of SiO₂ nanospheres were prepared by a simple solution-based method on the sapphire substrate. Subsequent dry-etching via inductively coupled plasma using a gas mixture of BCl₃ and Cl₂ transferred a pattern into the sapphire substrate with the lowest etching at the center of the SiO₂ nanosphere. This process created an array of circular cones in the surface of the sapphire that were found to be effective in enhancing the light extraction efficiency through multi-photon scatterings. Room temperature photoluminescence exhibited an increase of 22.5% in intensity after the surface of sapphire was textured.

Original language	English
Pages (from-to)	7744-7747
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	21
DOIs	https://doi.org/10.1016/j.tsf.2008.05.046
Publication status	Published - 2008 Sept 1

Bibliographical note

Funding Information:
The research at Korea University was supported by BK21 program. Research at NRL is partially supported by ONR.

Keywords

GaN
Light emitting diodes
Plasma etching
Sapphire
Surface texturing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications",

abstract = "The flip-chip configuration is employed for the production of high-brightness GaN-based light emitting diodes to improve the extraction of heat. A lithographic approach based on a sacrificial SiO2 nanosphere etch mask was developed to enhance the external extraction of light from the sapphire substrate. Closed-packed arrays of SiO2 nanospheres were prepared by a simple solution-based method on the sapphire substrate. Subsequent dry-etching via inductively coupled plasma using a gas mixture of BCl3 and Cl2 transferred a pattern into the sapphire substrate with the lowest etching at the center of the SiO2 nanosphere. This process created an array of circular cones in the surface of the sapphire that were found to be effective in enhancing the light extraction efficiency through multi-photon scatterings. Room temperature photoluminescence exhibited an increase of 22.5% in intensity after the surface of sapphire was textured.",

keywords = "GaN, Light emitting diodes, Plasma etching, Sapphire, Surface texturing",

author = "Kim, {Byung Jae} and Mastro, {Michael A.} and Hyunjung Jung and Kim, {Hong Yeol} and Kim, {Sung Hyun} and Holm, {Ron T.} and Jennifer Hite and Eddy, {Charles R.} and Joona Bang and Jihyun Kim",

note = "Funding Information: The research at Korea University was supported by BK21 program. Research at NRL is partially supported by ONR.",

year = "2008",

month = sep,

day = "1",

doi = "10.1016/j.tsf.2008.05.046",

language = "English",

volume = "516",

pages = "7744--7747",

journal = "Thin Solid Films",

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T1 - Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

AU - Kim, Byung Jae

AU - Mastro, Michael A.

AU - Jung, Hyunjung

AU - Kim, Hong Yeol

AU - Kim, Sung Hyun

AU - Holm, Ron T.

AU - Hite, Jennifer

AU - Eddy, Charles R.

AU - Bang, Joona

AU - Kim, Jihyun

N1 - Funding Information: The research at Korea University was supported by BK21 program. Research at NRL is partially supported by ONR.

PY - 2008/9/1

Y1 - 2008/9/1

N2 - The flip-chip configuration is employed for the production of high-brightness GaN-based light emitting diodes to improve the extraction of heat. A lithographic approach based on a sacrificial SiO2 nanosphere etch mask was developed to enhance the external extraction of light from the sapphire substrate. Closed-packed arrays of SiO2 nanospheres were prepared by a simple solution-based method on the sapphire substrate. Subsequent dry-etching via inductively coupled plasma using a gas mixture of BCl3 and Cl2 transferred a pattern into the sapphire substrate with the lowest etching at the center of the SiO2 nanosphere. This process created an array of circular cones in the surface of the sapphire that were found to be effective in enhancing the light extraction efficiency through multi-photon scatterings. Room temperature photoluminescence exhibited an increase of 22.5% in intensity after the surface of sapphire was textured.

AB - The flip-chip configuration is employed for the production of high-brightness GaN-based light emitting diodes to improve the extraction of heat. A lithographic approach based on a sacrificial SiO2 nanosphere etch mask was developed to enhance the external extraction of light from the sapphire substrate. Closed-packed arrays of SiO2 nanospheres were prepared by a simple solution-based method on the sapphire substrate. Subsequent dry-etching via inductively coupled plasma using a gas mixture of BCl3 and Cl2 transferred a pattern into the sapphire substrate with the lowest etching at the center of the SiO2 nanosphere. This process created an array of circular cones in the surface of the sapphire that were found to be effective in enhancing the light extraction efficiency through multi-photon scatterings. Room temperature photoluminescence exhibited an increase of 22.5% in intensity after the surface of sapphire was textured.

KW - GaN

KW - Light emitting diodes

KW - Plasma etching

KW - Sapphire

KW - Surface texturing

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U2 - 10.1016/j.tsf.2008.05.046

DO - 10.1016/j.tsf.2008.05.046

M3 - Letter

AN - SCOPUS:49349094168

SN - 0040-6090

VL - 516

SP - 7744

EP - 7747

JO - Thin Solid Films

JF - Thin Solid Films

IS - 21

ER -

Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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