Abstract
Inductively-coupled-plasma reactive ion etching (ICP-RIE) behaviour of ZnO has been investigated using BCl3-based plasmas; etch rates are studied as a function of plasma chemistry, ICP coil power and r.f. power. It is shown that compared with Cl2/Ar, Ar and CH4/H 2-based gas mixtures, pure BCl3 gas results in high etch rates, indicating that B and BCl radicals react with ZnO and form volatile compounds such as BxOy and/or BCl-O bond. It is further shown that the specific contact resistance as low as 1.5×10-5 Ωcm2 is obtained from Ti/Au contacts on the BCl3 plasma pretreated ZnO. Based on X-ray photoelectron spectroscopy results, possible mechanisms for the BCl3-pretreated improvement of ohmic properties are described.
Original language | English |
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Pages (from-to) | 90-94 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 447-448 |
DOIs | |
Publication status | Published - 2004 Jan 30 |
Externally published | Yes |
Event | Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States Duration: 2002 Apr 28 → 2002 May 2 |
Keywords
- BCl plasma
- ICP-RIE
- Ohmic contact
- Surface roughness
- ZnO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry