Inductively-coupled-plasma reactive ion etching of ZnO using BCl 3-based plasmas and effect of the plasma treatment on Ti/Au ohmic contacts to ZnO

Han Ki Kim; J. W. Bae; K. K. Kim; S. J. Park; Tae Yeon Seong; I. Adesida

doi:10.1016/j.tsf.2003.09.028

Inductively-coupled-plasma reactive ion etching of ZnO using BCl ₃-based plasmas and effect of the plasma treatment on Ti/Au ohmic contacts to ZnO

Han Ki Kim, J. W. Bae, K. K. Kim, S. J. Park, Tae Yeon Seong, I. Adesida

Research output: Contribution to journal › Conference article › peer-review

43 Citations (Scopus)

Abstract

Inductively-coupled-plasma reactive ion etching (ICP-RIE) behaviour of ZnO has been investigated using BCl₃-based plasmas; etch rates are studied as a function of plasma chemistry, ICP coil power and r.f. power. It is shown that compared with Cl₂/Ar, Ar and CH₄/H ₂-based gas mixtures, pure BCl₃ gas results in high etch rates, indicating that B and BCl radicals react with ZnO and form volatile compounds such as B_xO_y and/or BCl-O bond. It is further shown that the specific contact resistance as low as 1.5×10^-5 Ωcm² is obtained from Ti/Au contacts on the BCl₃ plasma pretreated ZnO. Based on X-ray photoelectron spectroscopy results, possible mechanisms for the BCl₃-pretreated improvement of ohmic properties are described.

Original language	English
Pages (from-to)	90-94
Number of pages	5
Journal	Thin Solid Films
Volume	447-448
DOIs	https://doi.org/10.1016/j.tsf.2003.09.028
Publication status	Published - 2004 Jan 30
Externally published	Yes
Event	Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States Duration: 2002 Apr 28 → 2002 May 2

Bibliographical note

Funding Information:
This work is supported in part by Brain Korea 21 project and the US Air force Office of Scientific Research/Asian Office of Aerospace Research and Development.

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

Keywords

BCl plasma
ICP-RIE
Ohmic contact
Surface roughness
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2003.09.028

Cite this

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title = "Inductively-coupled-plasma reactive ion etching of ZnO using BCl 3-based plasmas and effect of the plasma treatment on Ti/Au ohmic contacts to ZnO",

abstract = "Inductively-coupled-plasma reactive ion etching (ICP-RIE) behaviour of ZnO has been investigated using BCl3-based plasmas; etch rates are studied as a function of plasma chemistry, ICP coil power and r.f. power. It is shown that compared with Cl2/Ar, Ar and CH4/H 2-based gas mixtures, pure BCl3 gas results in high etch rates, indicating that B and BCl radicals react with ZnO and form volatile compounds such as BxOy and/or BCl-O bond. It is further shown that the specific contact resistance as low as 1.5×10-5 Ωcm2 is obtained from Ti/Au contacts on the BCl3 plasma pretreated ZnO. Based on X-ray photoelectron spectroscopy results, possible mechanisms for the BCl3-pretreated improvement of ohmic properties are described.",

keywords = "BCl plasma, ICP-RIE, Ohmic contact, Surface roughness, ZnO",

author = "Kim, {Han Ki} and Bae, {J. W.} and Kim, {K. K.} and Park, {S. J.} and Seong, {Tae Yeon} and I. Adesida",

note = "Funding Information: This work is supported in part by Brain Korea 21 project and the US Air force Office of Scientific Research/Asian Office of Aerospace Research and Development. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; Proceedings of the 30th International Conference on Metallurgie ; Conference date: 28-04-2002 Through 02-05-2002",

year = "2004",

month = jan,

day = "30",

doi = "10.1016/j.tsf.2003.09.028",

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T1 - Inductively-coupled-plasma reactive ion etching of ZnO using BCl 3-based plasmas and effect of the plasma treatment on Ti/Au ohmic contacts to ZnO

AU - Kim, Han Ki

AU - Bae, J. W.

AU - Kim, K. K.

AU - Park, S. J.

AU - Seong, Tae Yeon

AU - Adesida, I.

N1 - Funding Information: This work is supported in part by Brain Korea 21 project and the US Air force Office of Scientific Research/Asian Office of Aerospace Research and Development. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/1/30

Y1 - 2004/1/30

N2 - Inductively-coupled-plasma reactive ion etching (ICP-RIE) behaviour of ZnO has been investigated using BCl3-based plasmas; etch rates are studied as a function of plasma chemistry, ICP coil power and r.f. power. It is shown that compared with Cl2/Ar, Ar and CH4/H 2-based gas mixtures, pure BCl3 gas results in high etch rates, indicating that B and BCl radicals react with ZnO and form volatile compounds such as BxOy and/or BCl-O bond. It is further shown that the specific contact resistance as low as 1.5×10-5 Ωcm2 is obtained from Ti/Au contacts on the BCl3 plasma pretreated ZnO. Based on X-ray photoelectron spectroscopy results, possible mechanisms for the BCl3-pretreated improvement of ohmic properties are described.

AB - Inductively-coupled-plasma reactive ion etching (ICP-RIE) behaviour of ZnO has been investigated using BCl3-based plasmas; etch rates are studied as a function of plasma chemistry, ICP coil power and r.f. power. It is shown that compared with Cl2/Ar, Ar and CH4/H 2-based gas mixtures, pure BCl3 gas results in high etch rates, indicating that B and BCl radicals react with ZnO and form volatile compounds such as BxOy and/or BCl-O bond. It is further shown that the specific contact resistance as low as 1.5×10-5 Ωcm2 is obtained from Ti/Au contacts on the BCl3 plasma pretreated ZnO. Based on X-ray photoelectron spectroscopy results, possible mechanisms for the BCl3-pretreated improvement of ohmic properties are described.

KW - BCl plasma

KW - ICP-RIE

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KW - Surface roughness

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