Inductively coupled plasma reactive ion etching of ZnO using BCl 3-based plasmas

Han Ki Kim; J. W. Bae; T. K. Kim; K. K. Kim; T. Y. Seong; I. Adesida

Inductively coupled plasma reactive ion etching of ZnO using BCl ₃-based plasmas

Han Ki Kim, J. W. Bae, T. K. Kim, K. K. Kim, T. Y. Seong, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

A report on inductively coupled plasma (ICP) reactive ion etching of ZnO using BCl₃-based plasmas, was presented. Etch rates were studied as a function of BCl₃/Cl₂/Ar chemistries, ICP coil power, working pressure and substrate temperature. It was shown that the BCl ₃-based etching process produces negligible changes in the surface stoichiometry of ZnO.

Original language	English
Pages (from-to)	1273-1277
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	4
Publication status	Published - 2003 Jul
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@article{673d13a4901c45d8bb0f10006a892ec1,

title = "Inductively coupled plasma reactive ion etching of ZnO using BCl 3-based plasmas",

abstract = "A report on inductively coupled plasma (ICP) reactive ion etching of ZnO using BCl3-based plasmas, was presented. Etch rates were studied as a function of BCl3/Cl2/Ar chemistries, ICP coil power, working pressure and substrate temperature. It was shown that the BCl 3-based etching process produces negligible changes in the surface stoichiometry of ZnO.",

author = "Kim, {Han Ki} and Bae, {J. W.} and Kim, {T. K.} and Kim, {K. K.} and Seong, {T. Y.} and I. Adesida",

year = "2003",

month = jul,

language = "English",

volume = "21",

pages = "1273--1277",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Inductively coupled plasma reactive ion etching of ZnO using BCl 3-based plasmas

AU - Kim, Han Ki

AU - Bae, J. W.

AU - Kim, T. K.

AU - Kim, K. K.

AU - Seong, T. Y.

AU - Adesida, I.

PY - 2003/7

Y1 - 2003/7

N2 - A report on inductively coupled plasma (ICP) reactive ion etching of ZnO using BCl3-based plasmas, was presented. Etch rates were studied as a function of BCl3/Cl2/Ar chemistries, ICP coil power, working pressure and substrate temperature. It was shown that the BCl 3-based etching process produces negligible changes in the surface stoichiometry of ZnO.

AB - A report on inductively coupled plasma (ICP) reactive ion etching of ZnO using BCl3-based plasmas, was presented. Etch rates were studied as a function of BCl3/Cl2/Ar chemistries, ICP coil power, working pressure and substrate temperature. It was shown that the BCl 3-based etching process produces negligible changes in the surface stoichiometry of ZnO.

UR - http://www.scopus.com/inward/record.url?scp=0141793154&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0141793154

SN - 1071-1023

VL - 21

SP - 1273

EP - 1277

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Inductively coupled plasma reactive ion etching of ZnO using BCl ₃-based plasmas

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this