P-i-n 4H-SiC rectifiers with SiO2 passivated mesa edge termination showed forward current characteristics dominated by recombination at low bias (n ∼ 1.97) and diffusion at high voltages (n ∼ 1.1). The forward turn-on voltage was ∼4 V, with a specific on-state resistance of 15 mΩ cm2, on/off current ratio of 1.5 × 105 at 3 V/-450 V and figure-of-merit, VB2/RON, of 13.5 MW cm-2. The mesa extension distance did not have a strong impact on reverse breakdown voltage.
|Number of pages||4|
|Publication status||Published - 2003 Jan|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry