Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers

S. Nigam; Jihyun Kim; B. Luo; F. Ren; G. Y. Chung; S. J. Pearton; J. R. Williams; K. Shenai; P. Neudeck

doi:10.1016/S0038-1101(02)00272-1

Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers

S. Nigam, Jihyun Kim, B. Luo, F. Ren, G. Y. Chung, S. J. Pearton, J. R. Williams, K. Shenai, P. Neudeck

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

P-i-n 4H-SiC rectifiers with SiO₂ passivated mesa edge termination showed forward current characteristics dominated by recombination at low bias (n ∼ 1.97) and diffusion at high voltages (n ∼ 1.1). The forward turn-on voltage was ∼4 V, with a specific on-state resistance of 15 mΩ cm², on/off current ratio of 1.5 × 10⁵ at 3 V/-450 V and figure-of-merit, V_B²/R_ON, of 13.5 MW cm^-2. The mesa extension distance did not have a strong impact on reverse breakdown voltage.

Original language	English
Pages (from-to)	61-64
Number of pages	4
Journal	Solid-State Electronics
Volume	47
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(02)00272-1
Publication status	Published - 2003 Jan
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(02)00272-1

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title = "Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers",

abstract = "P-i-n 4H-SiC rectifiers with SiO2 passivated mesa edge termination showed forward current characteristics dominated by recombination at low bias (n ∼ 1.97) and diffusion at high voltages (n ∼ 1.1). The forward turn-on voltage was ∼4 V, with a specific on-state resistance of 15 mΩ cm2, on/off current ratio of 1.5 × 105 at 3 V/-450 V and figure-of-merit, VB2/RON, of 13.5 MW cm-2. The mesa extension distance did not have a strong impact on reverse breakdown voltage.",

author = "S. Nigam and Jihyun Kim and B. Luo and F. Ren and Chung, {G. Y.} and Pearton, {S. J.} and Williams, {J. R.} and K. Shenai and P. Neudeck",

note = "Funding Information: The work at UF is partially supported by NSF CTS 1109973. Sterling Semiconductor acknowledges the epi growth from Dr. Heinz Lendenmann (ABB).",

year = "2003",

month = jan,

doi = "10.1016/S0038-1101(02)00272-1",

language = "English",

volume = "47",

pages = "61--64",

journal = "Solid-State Electronics",

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TY - JOUR

T1 - Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers

AU - Nigam, S.

AU - Kim, Jihyun

AU - Luo, B.

AU - Ren, F.

AU - Chung, G. Y.

AU - Pearton, S. J.

AU - Williams, J. R.

AU - Shenai, K.

AU - Neudeck, P.

N1 - Funding Information: The work at UF is partially supported by NSF CTS 1109973. Sterling Semiconductor acknowledges the epi growth from Dr. Heinz Lendenmann (ABB).

PY - 2003/1

Y1 - 2003/1

N2 - P-i-n 4H-SiC rectifiers with SiO2 passivated mesa edge termination showed forward current characteristics dominated by recombination at low bias (n ∼ 1.97) and diffusion at high voltages (n ∼ 1.1). The forward turn-on voltage was ∼4 V, with a specific on-state resistance of 15 mΩ cm2, on/off current ratio of 1.5 × 105 at 3 V/-450 V and figure-of-merit, VB2/RON, of 13.5 MW cm-2. The mesa extension distance did not have a strong impact on reverse breakdown voltage.

AB - P-i-n 4H-SiC rectifiers with SiO2 passivated mesa edge termination showed forward current characteristics dominated by recombination at low bias (n ∼ 1.97) and diffusion at high voltages (n ∼ 1.1). The forward turn-on voltage was ∼4 V, with a specific on-state resistance of 15 mΩ cm2, on/off current ratio of 1.5 × 105 at 3 V/-450 V and figure-of-merit, VB2/RON, of 13.5 MW cm-2. The mesa extension distance did not have a strong impact on reverse breakdown voltage.

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U2 - 10.1016/S0038-1101(02)00272-1

DO - 10.1016/S0038-1101(02)00272-1

M3 - Article

AN - SCOPUS:0037211140

SN - 0038-1101

VL - 47

SP - 61

EP - 64

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers

Abstract

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