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Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers
S. Nigam, Jihyun Kim, B. Luo, F. Ren, G. Y. Chung, S. J. Pearton, J. R. Williams, K. Shenai, P. Neudeck
Research output: Contribution to journal › Article › peer-review
2
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(Scopus)