Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes

K. C. Kim; Y. C. Choi; D. H. Kim; T. G. Kim; S. H. Yoon; C. S. Sone; Y. J. Park

doi:10.1002/pssa.200405031

Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes

K. C. Kim, Y. C. Choi, D. H. Kim, T. G. Kim, S. H. Yoon, C. S. Sone, Y. J. Park

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

InGaN-GaN multiple quantum well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) with and without n-AlGaN electron tunneling barriers (ETBs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), are characterized by comparison with device simulation results. Compared with a conventional LED without the ETB, one of the proposed LEDs with the optimized ETB shows an 11% increase in normalized photodiode (PD) currents. We contribute this improvement to the reduced number of hot electron overflowing to the p-side from MQW by low-energy electron tunneling, which is consistent with the simulation results regarding the carrier distributions.

Original language	English
Pages (from-to)	2663-2667
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	201
Issue number	12
DOIs	https://doi.org/10.1002/pssa.200405031
Publication status	Published - 2004 Sept
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes",

abstract = "InGaN-GaN multiple quantum well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) with and without n-AlGaN electron tunneling barriers (ETBs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), are characterized by comparison with device simulation results. Compared with a conventional LED without the ETB, one of the proposed LEDs with the optimized ETB shows an 11% increase in normalized photodiode (PD) currents. We contribute this improvement to the reduced number of hot electron overflowing to the p-side from MQW by low-energy electron tunneling, which is consistent with the simulation results regarding the carrier distributions.",

author = "Kim, {K. C.} and Choi, {Y. C.} and Kim, {D. H.} and Kim, {T. G.} and Yoon, {S. H.} and Sone, {C. S.} and Park, {Y. J.}",

year = "2004",

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doi = "10.1002/pssa.200405031",

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volume = "201",

pages = "2663--2667",

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T1 - Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes

AU - Kim, K. C.

AU - Choi, Y. C.

AU - Kim, D. H.

AU - Kim, T. G.

AU - Yoon, S. H.

AU - Sone, C. S.

AU - Park, Y. J.

PY - 2004/9

Y1 - 2004/9

N2 - InGaN-GaN multiple quantum well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) with and without n-AlGaN electron tunneling barriers (ETBs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), are characterized by comparison with device simulation results. Compared with a conventional LED without the ETB, one of the proposed LEDs with the optimized ETB shows an 11% increase in normalized photodiode (PD) currents. We contribute this improvement to the reduced number of hot electron overflowing to the p-side from MQW by low-energy electron tunneling, which is consistent with the simulation results regarding the carrier distributions.

AB - InGaN-GaN multiple quantum well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) with and without n-AlGaN electron tunneling barriers (ETBs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), are characterized by comparison with device simulation results. Compared with a conventional LED without the ETB, one of the proposed LEDs with the optimized ETB shows an 11% increase in normalized photodiode (PD) currents. We contribute this improvement to the reduced number of hot electron overflowing to the p-side from MQW by low-energy electron tunneling, which is consistent with the simulation results regarding the carrier distributions.

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M3 - Article

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VL - 201

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JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 12

ER -

Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes

Abstract

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