Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes

K. C. Kim; Y. C. Choi; D. H. Kim; T. G. Kim; S. H. Yoon; C. S. Sone; Y. J. Park

doi:10.1002/pssa.200405031

Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes

K. C. Kim
, Y. C. Choi
, D. H. Kim
, T. G. Kim^*
, S. H. Yoon
, C. S. Sone
, Y. J. Park

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

InGaN-GaN multiple quantum well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) with and without n-AlGaN electron tunneling barriers (ETBs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), are characterized by comparison with device simulation results. Compared with a conventional LED without the ETB, one of the proposed LEDs with the optimized ETB shows an 11% increase in normalized photodiode (PD) currents. We contribute this improvement to the reduced number of hot electron overflowing to the p-side from MQW by low-energy electron tunneling, which is consistent with the simulation results regarding the carrier distributions.

Original language	English
Pages (from-to)	2663-2667
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	201
Issue number	12
DOIs	https://doi.org/10.1002/pssa.200405031
Publication status	Published - 2004 Sept
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssa.200405031

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title = "Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes",

abstract = "InGaN-GaN multiple quantum well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) with and without n-AlGaN electron tunneling barriers (ETBs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), are characterized by comparison with device simulation results. Compared with a conventional LED without the ETB, one of the proposed LEDs with the optimized ETB shows an 11\% increase in normalized photodiode (PD) currents. We contribute this improvement to the reduced number of hot electron overflowing to the p-side from MQW by low-energy electron tunneling, which is consistent with the simulation results regarding the carrier distributions.",

author = "Kim, \{K. C.\} and Choi, \{Y. C.\} and Kim, \{D. H.\} and Kim, \{T. G.\} and Yoon, \{S. H.\} and Sone, \{C. S.\} and Park, \{Y. J.\}",

year = "2004",

month = sep,

doi = "10.1002/pssa.200405031",

language = "English",

volume = "201",

pages = "2663--2667",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "12",

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TY - JOUR

T1 - Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes

AU - Kim, K. C.

AU - Choi, Y. C.

AU - Kim, D. H.

AU - Kim, T. G.

AU - Yoon, S. H.

AU - Sone, C. S.

AU - Park, Y. J.

PY - 2004/9

Y1 - 2004/9

N2 - InGaN-GaN multiple quantum well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) with and without n-AlGaN electron tunneling barriers (ETBs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), are characterized by comparison with device simulation results. Compared with a conventional LED without the ETB, one of the proposed LEDs with the optimized ETB shows an 11% increase in normalized photodiode (PD) currents. We contribute this improvement to the reduced number of hot electron overflowing to the p-side from MQW by low-energy electron tunneling, which is consistent with the simulation results regarding the carrier distributions.

AB - InGaN-GaN multiple quantum well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) with and without n-AlGaN electron tunneling barriers (ETBs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), are characterized by comparison with device simulation results. Compared with a conventional LED without the ETB, one of the proposed LEDs with the optimized ETB shows an 11% increase in normalized photodiode (PD) currents. We contribute this improvement to the reduced number of hot electron overflowing to the p-side from MQW by low-energy electron tunneling, which is consistent with the simulation results regarding the carrier distributions.

UR - https://www.scopus.com/pages/publications/6344250664

U2 - 10.1002/pssa.200405031

DO - 10.1002/pssa.200405031

M3 - Article

AN - SCOPUS:6344250664

SN - 0031-8965

VL - 201

SP - 2663

EP - 2667

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 12

ER -

Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes

Abstract

ASJC Scopus subject areas

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