Influence of gas mixture ratio on properties of SiNx:H films for Crystalline Silicon Solar Cells

K. Dong Lee; S. S. Dahiwale; Y. Do Kim; S. Kim; S. Bae; S. Park; S. Ju Tark; D. Kim

doi:10.1016/j.egypro.2012.07.087

Influence of gas mixture ratio on properties of SiNx:H films for Crystalline Silicon Solar Cells

K. Dong Lee, S. S. Dahiwale, Y. Do Kim, S. Kim, S. Bae, S. Park, S. Ju Tark, D. Kim

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

The Hydrogenated silicon nitride (SiN_x:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiN_x:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH₄+NH₃+N₂, SiH ₄+NH₃, SiH₄+N₂), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation properties. The film deposited with the gas mixture of SiH ₄+NH₃+N₂ showed the best properties in before and after firing process conditions. The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH₄+NH ₃+N₂) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2 %. The reason for the high efficiency using SiH₄+NH ₃+N₂ is because of the low film absorption coefficients (α) and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

Original language	English
Pages (from-to)	419-425
Number of pages	7
Journal	Energy Procedia
Volume	27
DOIs	https://doi.org/10.1016/j.egypro.2012.07.087
Publication status	Published - 2012
Event	2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012 - Leuven, Belgium Duration: 2012 Apr 3 → 2012 Apr 5

Bibliographical note

Funding Information:
This work was supported by the Human Resources Development grant and the New & Renewable Energy grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy, Republic of Korea (No. 20104010100640 and No.20093021010010) and was supported by the Korea University Grant.

Keywords

Field effect
Gas mixture
Optical property
Passivation
Silicon nitride
Silicon solar cells

ASJC Scopus subject areas

Energy(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.egypro.2012.07.087

Cite this

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title = "Influence of gas mixture ratio on properties of SiNx:H films for Crystalline Silicon Solar Cells",

abstract = "The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiNx:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH4+NH3+N2, SiH 4+NH3, SiH4+N2), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation properties. The film deposited with the gas mixture of SiH 4+NH3+N2 showed the best properties in before and after firing process conditions. The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH4+NH 3+N2) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2 %. The reason for the high efficiency using SiH4+NH 3+N2 is because of the low film absorption coefficients (α) and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.",

keywords = "Field effect, Gas mixture, Optical property, Passivation, Silicon nitride, Silicon solar cells",

author = "Lee, {K. Dong} and Dahiwale, {S. S.} and Kim, {Y. Do} and S. Kim and S. Bae and S. Park and Tark, {S. Ju} and D. Kim",

note = "Funding Information: This work was supported by the Human Resources Development grant and the New & Renewable Energy grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy, Republic of Korea (No. 20104010100640 and No.20093021010010) and was supported by the Korea University Grant.; 2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012 ; Conference date: 03-04-2012 Through 05-04-2012",

year = "2012",

doi = "10.1016/j.egypro.2012.07.087",

language = "English",

volume = "27",

pages = "419--425",

journal = "Energy Procedia",

issn = "1876-6102",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Influence of gas mixture ratio on properties of SiNx:H films for Crystalline Silicon Solar Cells

AU - Lee, K. Dong

AU - Dahiwale, S. S.

AU - Kim, Y. Do

AU - Kim, S.

AU - Bae, S.

AU - Park, S.

AU - Tark, S. Ju

AU - Kim, D.

N1 - Funding Information: This work was supported by the Human Resources Development grant and the New & Renewable Energy grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy, Republic of Korea (No. 20104010100640 and No.20093021010010) and was supported by the Korea University Grant.

PY - 2012

Y1 - 2012

N2 - The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiNx:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH4+NH3+N2, SiH 4+NH3, SiH4+N2), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation properties. The film deposited with the gas mixture of SiH 4+NH3+N2 showed the best properties in before and after firing process conditions. The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH4+NH 3+N2) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2 %. The reason for the high efficiency using SiH4+NH 3+N2 is because of the low film absorption coefficients (α) and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

AB - The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiNx:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH4+NH3+N2, SiH 4+NH3, SiH4+N2), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation properties. The film deposited with the gas mixture of SiH 4+NH3+N2 showed the best properties in before and after firing process conditions. The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH4+NH 3+N2) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2 %. The reason for the high efficiency using SiH4+NH 3+N2 is because of the low film absorption coefficients (α) and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

KW - Field effect

KW - Gas mixture

KW - Optical property

KW - Passivation

KW - Silicon nitride

KW - Silicon solar cells

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U2 - 10.1016/j.egypro.2012.07.087

DO - 10.1016/j.egypro.2012.07.087

M3 - Conference article

AN - SCOPUS:84879952784

SN - 1876-6102

VL - 27

SP - 419

EP - 425

JO - Energy Procedia

JF - Energy Procedia

T2 - 2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012

Y2 - 3 April 2012 through 5 April 2012

ER -

Influence of gas mixture ratio on properties of SiNx:H films for Crystalline Silicon Solar Cells

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

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