The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiNx:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH4+NH3+N2, SiH 4+NH3, SiH4+N2), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation properties. The film deposited with the gas mixture of SiH 4+NH3+N2 showed the best properties in before and after firing process conditions. The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH4+NH 3+N2) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2 %. The reason for the high efficiency using SiH4+NH 3+N2 is because of the low film absorption coefficients (α) and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.
|Number of pages
|Published - 2012
|2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012 - Leuven, Belgium
Duration: 2012 Apr 3 → 2012 Apr 5
Bibliographical noteFunding Information:
This work was supported by the Human Resources Development grant and the New & Renewable Energy grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy, Republic of Korea (No. 20104010100640 and No.20093021010010) and was supported by the Korea University Grant.
- Field effect
- Gas mixture
- Optical property
- Silicon nitride
- Silicon solar cells
ASJC Scopus subject areas
- General Energy