Influence of gate dielectrics on the performance of single-layered organic transistors and bi-layered organic light-emitting transistors prepared by the neutral cluster beam deposition method

Ying Zhang, Hoon Seok Seo, Min Jun An, Jeong Do Oh, Jong Ho Choi

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

The influence of two different SiO2 and polymethylmethacrylate (PMMA) gate dielectrics on the performance of single-layered organic field-effect transistors and bi-layered organic light-emitting field-effect transistors was examined. Organic active layers of p-type α,ω- dihexylsexithiophene and n-type N,N′-ditridecylperylene-3,4,9,10- tetracarboxylic diimide were prepared using the neutral cluster beam deposition method. Characterization of surface morphology, contact angles, structural properties and temperature dependence of field-effect mobilities measured over the temperature range of 10-300 K revealed that compared to the SiO2 dielectrics, the hydroxyl-free PMMA dielectrics provided better conditions for crystalline film growth. The PMMA-based device characteristics exhibited excellent field-effect mobilities, stress-free operational stability, and electroluminescence through efficient carrier transport and well-balanced ambipolarity under ambient conditions.

Original languageEnglish
Article number084503
JournalJournal of Applied Physics
Volume109
Issue number8
DOIs
Publication statusPublished - 2011 Apr 15

Bibliographical note

Funding Information:
This work was supported by National Research Foundation of Korea Grant funded by the Korean Government (2010-0014418) and Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF20100020209).

ASJC Scopus subject areas

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Influence of gate dielectrics on the performance of single-layered organic transistors and bi-layered organic light-emitting transistors prepared by the neutral cluster beam deposition method'. Together they form a unique fingerprint.

Cite this