Influence of growth break before capping on photoluminescence dynamics of CdSe/ZnSe self-assembled quantum dots

S. Nowak; J. Suffczyński; M. Goryca; P. Kossacki; J. A. Gaj; S. Lee; J. K. Furdyna

doi:10.12693/APhysPolA.114.1267

Influence of growth break before capping on photoluminescence dynamics of CdSe/ZnSe self-assembled quantum dots

S. Nowak, J. Suffczyński, M. Goryca, P. Kossacki, J. A. Gaj, S. Lee, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Influence of growth breaks before capping of CdSe self-assembled quantum dot layers on photoluminescence dynamics was examined in three samples. Short (5 s) break resulted only in a small blue shift, caused probably by partial strain relaxation and/or Zn interdiffusion. Long (20 min) break induced a strong broadening and red shift of the spectra, combined with a dramatic slow down of the photoluminescence decays. The main result of the long break was identified as introduction of defects (impurities), which generate local electric fields and act as traps of photogenerated carriers.

Original language	English
Pages (from-to)	1267-1271
Number of pages	5
Journal	Acta Physica Polonica A
Volume	114
Issue number	5
DOIs	https://doi.org/10.12693/APhysPolA.114.1267
Publication status	Published - 2008 Nov

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Influence of growth breaks before capping of CdSe self-assembled quantum dot layers on photoluminescence dynamics was examined in three samples. Short (5 s) break resulted only in a small blue shift, caused probably by partial strain relaxation and/or Zn interdiffusion. Long (20 min) break induced a strong broadening and red shift of the spectra, combined with a dramatic slow down of the photoluminescence decays. The main result of the long break was identified as introduction of defects (impurities), which generate local electric fields and act as traps of photogenerated carriers.",

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T1 - Influence of growth break before capping on photoluminescence dynamics of CdSe/ZnSe self-assembled quantum dots

AU - Nowak, S.

AU - Suffczyński, J.

AU - Goryca, M.

AU - Kossacki, P.

AU - Gaj, J. A.

AU - Lee, S.

AU - Furdyna, J. K.

PY - 2008/11

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AB - Influence of growth breaks before capping of CdSe self-assembled quantum dot layers on photoluminescence dynamics was examined in three samples. Short (5 s) break resulted only in a small blue shift, caused probably by partial strain relaxation and/or Zn interdiffusion. Long (20 min) break induced a strong broadening and red shift of the spectra, combined with a dramatic slow down of the photoluminescence decays. The main result of the long break was identified as introduction of defects (impurities), which generate local electric fields and act as traps of photogenerated carriers.

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Influence of growth break before capping on photoluminescence dynamics of CdSe/ZnSe self-assembled quantum dots

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