Influence of High-Energy Proton Irradiation on β-Ga₂O₃ Nanobelt Field-Effect Transistors

Engineering & Materials Science

• Nanobelts 100%
• Proton irradiation 93%
• Field effect transistors 57%
• Radiation 42%
• Protons 25%
• Space applications 24%
• Energy gap 24%
• Proton beams 17%
• Rapid thermal annealing 16%
• Band structure 15%
• Dosimetry 13%
• Threshold voltage 11%
• Irradiation 11%
• Durability 8%
• Degradation 7%
• Metals 6%
• Temperature 4%

Chemical Compounds

• Field Effect 53%
• Proton 35%
• Rapid Thermal Annealing 20%
• Electronic Band Structure 13%
• Dose 10%
• Compound Mobility 10%
• Band Gap 10%
• Voltage 9%
• Block Like Crystal 9%
• Resistance 8%
• Application 8%
• Ambient Reaction Temperature 7%
• Metal 6%