Influence of hydrogen incorporation on conductivity and work function of VO 2 nanowires

Jeong Young Park, Jae Eun Kim, Jung Yeol Shin, Hyun Seok Jang, Jun Woo Jeon, Won G. Hong, Hae Jin Kim, Junhee Choi, Gyu Tae Kim, Byung Hoon Kim, Jonghyurk Park, Young Jin Choi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We report improved conductance by reducing the work function via incorporation of hydrogen into VO 2 nanowires. The VO 2 nanowires were prepared using the chemical vapor deposition method with V 2 O 5 powder on silicon substrates at 850 °C. Hydrogenation was carried out using the high-pressure hydrogenation method. Raman spectroscopy confirmed that the incorporated hydrogen atoms resulted in a change in the lattice constant of the VO 2 nanowires (NWs). To quantitatively measure the work function of the nanowires, Kelvin probe force microscopy (KPFM) was employed at ambient conditions. We found that the work function decreased with increasing H 2 pressure, which also resulted in increased conductance. This is associated with hydrogen diffused into the VO 2 that acts as a donor to elevate the Fermi level, which was also confirmed by KPFM. From these results, tuning of the reversible electrical properties of VO 2 NWs, including the conductance and work function, can be achieved by incorporating hydrogen at relatively moderate temperatures.

Original languageEnglish
Pages (from-to)4219-4225
Number of pages7
Issue number10
Publication statusPublished - 2019 Mar 14

ASJC Scopus subject areas

  • Materials Science(all)


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