Influence of hydrogen incorporation on conductivity and work function of VO                         2                          nanowires

Jeong Young Park; Jae Eun Kim; Jung Yeol Shin; Hyun Seok Jang; Jun Woo Jeon; Won G. Hong; Hae Jin Kim; Junhee Choi; Gyu Tae Kim; Byung Hoon Kim; Jonghyurk Park; Young Jin Choi

doi:10.1039/c9nr00245f

Influence of hydrogen incorporation on conductivity and work function of VO ₂ nanowires

Jeong Young Park^*
, Jae Eun Kim
, Jung Yeol Shin
, Hyun Seok Jang
, Jun Woo Jeon
, Won G. Hong
, Hae Jin Kim
, Junhee Choi
, Gyu Tae Kim
, Byung Hoon Kim
, Jonghyurk Park
, Young Jin Choi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report improved conductance by reducing the work function via incorporation of hydrogen into VO ₂ nanowires. The VO ₂ nanowires were prepared using the chemical vapor deposition method with V ₂ O ₅ powder on silicon substrates at 850 °C. Hydrogenation was carried out using the high-pressure hydrogenation method. Raman spectroscopy confirmed that the incorporated hydrogen atoms resulted in a change in the lattice constant of the VO ₂ nanowires (NWs). To quantitatively measure the work function of the nanowires, Kelvin probe force microscopy (KPFM) was employed at ambient conditions. We found that the work function decreased with increasing H ₂ pressure, which also resulted in increased conductance. This is associated with hydrogen diffused into the VO ₂ that acts as a donor to elevate the Fermi level, which was also confirmed by KPFM. From these results, tuning of the reversible electrical properties of VO ₂ NWs, including the conductance and work function, can be achieved by incorporating hydrogen at relatively moderate temperatures.

Original language	English
Pages (from-to)	4219-4225
Number of pages	7
Journal	Nanoscale
Volume	11
Issue number	10
DOIs	https://doi.org/10.1039/c9nr00245f
Publication status	Published - 2019 Mar 14

Bibliographical note

Funding Information:
This work was supported by the Institute for Basic Science (IBS) [IBS-R004]. This research was also supported by the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (NRF-2014M3C1A3053029). B. H. K was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1A6A1A06015181 and NRF-2017R1A1A1A05000789). In addition, this research was financially supported by the Ministry of Trade, Industry and Energy (MOTIE) and the Korea Institute for Advancement of Technology (KIAT) through the International Cooperative R&D program (grant no. N0001819) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2017K1A3A1A19070288).

Publisher Copyright:
© 2019 The Royal Society of Chemistry.

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1039/c9nr00245f

Cite this

Park, J. Y., Kim, J. E., Shin, J. Y., Jang, H. S., Jeon, J. W., Hong, W. G., Kim, H. J., Choi, J., Kim, G. T., Kim, B. H., Park, J., & Choi, Y. J. (2019). Influence of hydrogen incorporation on conductivity and work function of VO ₂ nanowires Nanoscale, 11(10), 4219-4225. https://doi.org/10.1039/c9nr00245f

Park, JY, Kim, JE, Shin, JY, Jang, HS, Jeon, JW, Hong, WG, Kim, HJ, Choi, J, Kim, GT, Kim, BH, Park, J & Choi, YJ 2019, ' Influence of hydrogen incorporation on conductivity and work function of VO ₂ nanowires ', Nanoscale, vol. 11, no. 10, pp. 4219-4225. https://doi.org/10.1039/c9nr00245f

@article{bc156898d62146d0b3e13d651c3ec1ab,

title = " Influence of hydrogen incorporation on conductivity and work function of VO 2 nanowires ",

abstract = " We report improved conductance by reducing the work function via incorporation of hydrogen into VO 2 nanowires. The VO 2 nanowires were prepared using the chemical vapor deposition method with V 2 O 5 powder on silicon substrates at 850 °C. Hydrogenation was carried out using the high-pressure hydrogenation method. Raman spectroscopy confirmed that the incorporated hydrogen atoms resulted in a change in the lattice constant of the VO 2 nanowires (NWs). To quantitatively measure the work function of the nanowires, Kelvin probe force microscopy (KPFM) was employed at ambient conditions. We found that the work function decreased with increasing H 2 pressure, which also resulted in increased conductance. This is associated with hydrogen diffused into the VO 2 that acts as a donor to elevate the Fermi level, which was also confirmed by KPFM. From these results, tuning of the reversible electrical properties of VO 2 NWs, including the conductance and work function, can be achieved by incorporating hydrogen at relatively moderate temperatures.",

author = "Park, \{Jeong Young\} and Kim, \{Jae Eun\} and Shin, \{Jung Yeol\} and Jang, \{Hyun Seok\} and Jeon, \{Jun Woo\} and Hong, \{Won G.\} and Kim, \{Hae Jin\} and Junhee Choi and Kim, \{Gyu Tae\} and Kim, \{Byung Hoon\} and Jonghyurk Park and Choi, \{Young Jin\}",

note = "Funding Information: This work was supported by the Institute for Basic Science (IBS) [IBS-R004]. This research was also supported by the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (NRF-2014M3C1A3053029). B. H. K was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1A6A1A06015181 and NRF-2017R1A1A1A05000789). In addition, this research was financially supported by the Ministry of Trade, Industry and Energy (MOTIE) and the Korea Institute for Advancement of Technology (KIAT) through the International Cooperative R\&D program (grant no. N0001819) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT \& Future Planning (NRF-2017K1A3A1A19070288). Publisher Copyright: {\textcopyright} 2019 The Royal Society of Chemistry.",

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doi = "10.1039/c9nr00245f",

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T1 - Influence of hydrogen incorporation on conductivity and work function of VO 2 nanowires

AU - Park, Jeong Young

AU - Kim, Jae Eun

AU - Shin, Jung Yeol

AU - Jang, Hyun Seok

AU - Jeon, Jun Woo

AU - Hong, Won G.

AU - Kim, Hae Jin

AU - Choi, Junhee

AU - Kim, Gyu Tae

AU - Kim, Byung Hoon

AU - Park, Jonghyurk

AU - Choi, Young Jin

N1 - Funding Information: This work was supported by the Institute for Basic Science (IBS) [IBS-R004]. This research was also supported by the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (NRF-2014M3C1A3053029). B. H. K was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1A6A1A06015181 and NRF-2017R1A1A1A05000789). In addition, this research was financially supported by the Ministry of Trade, Industry and Energy (MOTIE) and the Korea Institute for Advancement of Technology (KIAT) through the International Cooperative R&D program (grant no. N0001819) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2017K1A3A1A19070288). Publisher Copyright: © 2019 The Royal Society of Chemistry.

PY - 2019/3/14

Y1 - 2019/3/14

N2 - We report improved conductance by reducing the work function via incorporation of hydrogen into VO 2 nanowires. The VO 2 nanowires were prepared using the chemical vapor deposition method with V 2 O 5 powder on silicon substrates at 850 °C. Hydrogenation was carried out using the high-pressure hydrogenation method. Raman spectroscopy confirmed that the incorporated hydrogen atoms resulted in a change in the lattice constant of the VO 2 nanowires (NWs). To quantitatively measure the work function of the nanowires, Kelvin probe force microscopy (KPFM) was employed at ambient conditions. We found that the work function decreased with increasing H 2 pressure, which also resulted in increased conductance. This is associated with hydrogen diffused into the VO 2 that acts as a donor to elevate the Fermi level, which was also confirmed by KPFM. From these results, tuning of the reversible electrical properties of VO 2 NWs, including the conductance and work function, can be achieved by incorporating hydrogen at relatively moderate temperatures.

AB - We report improved conductance by reducing the work function via incorporation of hydrogen into VO 2 nanowires. The VO 2 nanowires were prepared using the chemical vapor deposition method with V 2 O 5 powder on silicon substrates at 850 °C. Hydrogenation was carried out using the high-pressure hydrogenation method. Raman spectroscopy confirmed that the incorporated hydrogen atoms resulted in a change in the lattice constant of the VO 2 nanowires (NWs). To quantitatively measure the work function of the nanowires, Kelvin probe force microscopy (KPFM) was employed at ambient conditions. We found that the work function decreased with increasing H 2 pressure, which also resulted in increased conductance. This is associated with hydrogen diffused into the VO 2 that acts as a donor to elevate the Fermi level, which was also confirmed by KPFM. From these results, tuning of the reversible electrical properties of VO 2 NWs, including the conductance and work function, can be achieved by incorporating hydrogen at relatively moderate temperatures.

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