Influence of intentionally strained sapphire substrate on GaN epilayers

Jaekyun Kim; Young Ju Park; Dongjin Byun; Eui Kwan Koh; Eun Kyu Kim; Suk Ki Min

doi:10.1109/IMNC.2002.1178628

Influence of intentionally strained sapphire substrate on GaN epilayers

Jaekyun Kim, Young Ju Park, Dongjin Byun, Eui Kwan Koh, Eun Kyu Kim, Suk Ki Min

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The structural and optical properties of GaN epilayers grown on intentionally strained sapphire (0001) substrates were investigated. In general, sapphire substrate experiences the tensile stress whereas GaN epilayer experience the compressive stress in the case of GaN/sapphire system. To examine the effects of intentionally strained sapphire substrate on the GaN epilayers, it was obliquely implanted with 2.4 MeV energy Cl⁺ and As⁺ ions to 10¹⁵ cm^-1 dose where TRIM-simulated projection ranges (R_p) are 1.16 and 0.95 μm, respectively. Cl⁺ ion implantation is expected to generate the lower strain field within the sapphire substrate, since it has smaller ionic radius (r_Cl+ < r_As+) and deeper R_p (R_{p Cl+} > R_{p As+}) than the As⁺. To recover the disordered sapphire surface caused by implants, rapid thermal annealing was performed. After that, GaN epilayers were deposited on the low temperature GaN buffer layers grown by metal organic chemical vapor deposition (MOCVD) technique.

Original language	English
Title of host publication	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	230-231
Number of pages	2
ISBN (Electronic)	4891140313, 9784891140311
DOIs	https://doi.org/10.1109/IMNC.2002.1178628
Publication status	Published - 2002
Event	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan Duration: 2002 Nov 6 → 2002 Nov 8

Publication series

Name	2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2002
Country/Territory	Japan
City	Tokyo
Period	02/11/6 → 02/11/8

Bibliographical note

Publisher Copyright:
© 2002 IEEE.

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IMNC.2002.1178628

Cite this

Kim, J., Park, Y. J., Byun, D., Koh, E. K., Kim, E. K., & Min, S. K. (2002). Influence of intentionally strained sapphire substrate on GaN epilayers. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 230-231). Article 1178628 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178628

Influence of intentionally strained sapphire substrate on GaN epilayers. / Kim, Jaekyun; Park, Young Ju; Byun, Dongjin et al.
2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 230-231 1178628 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, J, Park, YJ, Byun, D, Koh, EK, Kim, EK & Min, SK 2002, Influence of intentionally strained sapphire substrate on GaN epilayers. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178628, 2002 International Microprocesses and Nanotechnology Conference, MNC 2002, Institute of Electrical and Electronics Engineers Inc., pp. 230-231, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 02/11/6. https://doi.org/10.1109/IMNC.2002.1178628

Kim J, Park YJ, Byun D, Koh EK, Kim EK, Min SK. Influence of intentionally strained sapphire substrate on GaN epilayers. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 230-231. 1178628. (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). doi: 10.1109/IMNC.2002.1178628

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abstract = "The structural and optical properties of GaN epilayers grown on intentionally strained sapphire (0001) substrates were investigated. In general, sapphire substrate experiences the tensile stress whereas GaN epilayer experience the compressive stress in the case of GaN/sapphire system. To examine the effects of intentionally strained sapphire substrate on the GaN epilayers, it was obliquely implanted with 2.4 MeV energy Cl+ and As+ ions to 1015 cm-1 dose where TRIM-simulated projection ranges (Rp) are 1.16 and 0.95 μm, respectively. Cl+ ion implantation is expected to generate the lower strain field within the sapphire substrate, since it has smaller ionic radius (rCl+ < rAs+) and deeper Rp (Rp Cl+ > Rp As+) than the As+. To recover the disordered sapphire surface caused by implants, rapid thermal annealing was performed. After that, GaN epilayers were deposited on the low temperature GaN buffer layers grown by metal organic chemical vapor deposition (MOCVD) technique.",

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AU - Min, Suk Ki

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N2 - The structural and optical properties of GaN epilayers grown on intentionally strained sapphire (0001) substrates were investigated. In general, sapphire substrate experiences the tensile stress whereas GaN epilayer experience the compressive stress in the case of GaN/sapphire system. To examine the effects of intentionally strained sapphire substrate on the GaN epilayers, it was obliquely implanted with 2.4 MeV energy Cl+ and As+ ions to 1015 cm-1 dose where TRIM-simulated projection ranges (Rp) are 1.16 and 0.95 μm, respectively. Cl+ ion implantation is expected to generate the lower strain field within the sapphire substrate, since it has smaller ionic radius (rCl+ < rAs+) and deeper Rp (Rp Cl+ > Rp As+) than the As+. To recover the disordered sapphire surface caused by implants, rapid thermal annealing was performed. After that, GaN epilayers were deposited on the low temperature GaN buffer layers grown by metal organic chemical vapor deposition (MOCVD) technique.

AB - The structural and optical properties of GaN epilayers grown on intentionally strained sapphire (0001) substrates were investigated. In general, sapphire substrate experiences the tensile stress whereas GaN epilayer experience the compressive stress in the case of GaN/sapphire system. To examine the effects of intentionally strained sapphire substrate on the GaN epilayers, it was obliquely implanted with 2.4 MeV energy Cl+ and As+ ions to 1015 cm-1 dose where TRIM-simulated projection ranges (Rp) are 1.16 and 0.95 μm, respectively. Cl+ ion implantation is expected to generate the lower strain field within the sapphire substrate, since it has smaller ionic radius (rCl+ < rAs+) and deeper Rp (Rp Cl+ > Rp As+) than the As+. To recover the disordered sapphire surface caused by implants, rapid thermal annealing was performed. After that, GaN epilayers were deposited on the low temperature GaN buffer layers grown by metal organic chemical vapor deposition (MOCVD) technique.

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Influence of intentionally strained sapphire substrate on GaN epilayers

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