The structural and optical properties of GaN epilayers grown on intentionally strained sapphire (0001) substrates were investigated. In general, sapphire substrate experiences the tensile stress whereas GaN epilayer experience the compressive stress in the case of GaN/sapphire system. To examine the effects of intentionally strained sapphire substrate on the GaN epilayers, it was obliquely implanted with 2.4 MeV energy Cl+ and As+ ions to 1015 cm-1 dose where TRIM-simulated projection ranges (Rp) are 1.16 and 0.95 μm, respectively. Cl+ ion implantation is expected to generate the lower strain field within the sapphire substrate, since it has smaller ionic radius (rCl+ < rAs+) and deeper Rp (Rp Cl+ > Rp As+) than the As+. To recover the disordered sapphire surface caused by implants, rapid thermal annealing was performed. After that, GaN epilayers were deposited on the low temperature GaN buffer layers grown by metal organic chemical vapor deposition (MOCVD) technique.
|Title of host publication||2002 International Microprocesses and Nanotechnology Conference, MNC 2002|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||2|
|ISBN (Electronic)||4891140313, 9784891140311|
|Publication status||Published - 2002|
|Event||International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan|
Duration: 2002 Nov 6 → 2002 Nov 8
|Name||2002 International Microprocesses and Nanotechnology Conference, MNC 2002|
|Other||International Microprocesses and Nanotechnology Conference, MNC 2002|
|Period||02/11/6 → 02/11/8|
Bibliographical notePublisher Copyright:
© 2002 IEEE.
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering