Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system: C modified interfaces-a first principle study

T. X. Wang, Y. Li, K. J. Lee, J. U. Cho, D. K. Kim, S. J. Noh, Y. K. Kim

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9 Citations (Scopus)

Abstract

The Fe/MgO/Fe magnetic tunnel junction with C modified interfaces has been studied based on the first principle density function theory method under a finite bias voltage for thin (five layers) and thick (ten layers) MgO barriers. Positive and negative tunneling magnetic resistance (TMR) ratios are obtained as a function of the interface structure. We found that the tunneling conductance is highly nonlinear for asymmetric systems with C at one side of the barrier, and even a sign reversal of the TMR as a function of the bias was found to be in agreement with experiments.

Original languageEnglish
Article number083714
JournalJournal of Applied Physics
Volume109
Issue number8
DOIs
Publication statusPublished - 2011 Apr 15

Bibliographical note

Funding Information:
This work is supported by the Scientific Research Foundation for Youth of Henan Normal University (No. 01026400017), the Nature Science Foundation of Hebei Province, China (No. A2010000013), the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab of the Korean government (MOST) (No. M60501000045-05A0100-04510), and the Ministry of Science and Technology (No. M10500000105-05J0000-10510).

ASJC Scopus subject areas

  • General Physics and Astronomy

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