Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo; J. W. Johnson; J. Kim; R. M. Mehandru; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; A. G. Baca; R. D. Briggs; R. J. Shul; C. Monier; J. Han

doi:10.1063/1.1455692

Influence of MgO and Sc₂O₃ passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, J. Han

Research output: Contribution to journal › Article › peer-review

185 Citations (Scopus)

Abstract

Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the gate and drain contact. Low-temperature (100°C) layers of MgO or Sc ₂O₃ deposited by plasma-assisted molecular-beam epitaxy are shown to effectively mitigate the collapse in drain current through passivation of the surface traps. These dielectrics may have advantages over the more conventional SiN_X passivation in terms of long-term device stability.

Original language	English
Pages (from-to)	1661-1663
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	9
DOIs	https://doi.org/10.1063/1.1455692
Publication status	Published - 2002 Mar 4
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors",

abstract = "Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the gate and drain contact. Low-temperature (100°C) layers of MgO or Sc 2O3 deposited by plasma-assisted molecular-beam epitaxy are shown to effectively mitigate the collapse in drain current through passivation of the surface traps. These dielectrics may have advantages over the more conventional SiNX passivation in terms of long-term device stability.",

author = "B. Luo and Johnson, {J. W.} and J. Kim and Mehandru, {R. M.} and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and Baca, {A. G.} and Briggs, {R. D.} and Shul, {R. J.} and C. Monier and J. Han",

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T1 - Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

AU - Luo, B.

AU - Johnson, J. W.

AU - Kim, J.

AU - Mehandru, R. M.

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Baca, A. G.

AU - Briggs, R. D.

AU - Shul, R. J.

AU - Monier, C.

AU - Han, J.

PY - 2002/3/4

Y1 - 2002/3/4

N2 - Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the gate and drain contact. Low-temperature (100°C) layers of MgO or Sc 2O3 deposited by plasma-assisted molecular-beam epitaxy are shown to effectively mitigate the collapse in drain current through passivation of the surface traps. These dielectrics may have advantages over the more conventional SiNX passivation in terms of long-term device stability.

AB - Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the gate and drain contact. Low-temperature (100°C) layers of MgO or Sc 2O3 deposited by plasma-assisted molecular-beam epitaxy are shown to effectively mitigate the collapse in drain current through passivation of the surface traps. These dielectrics may have advantages over the more conventional SiNX passivation in terms of long-term device stability.

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Influence of MgO and Sc₂O₃ passivation on AlGaN/GaN high-electron-mobility transistors

Abstract

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