Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
- B. Luo*
- , J. W. Johnson
- , J. Kim
- , R. M. Mehandru
- , F. Ren
- , B. P. Gila
- , A. H. Onstine
- , C. R. Abernathy
- , S. J. Pearton
- , A. G. Baca
- , R. D. Briggs
- , R. J. Shul
- , C. Monier
- , J. Han
*Corresponding author for this work
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