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Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, J. Han
Research output: Contribution to journal › Article › peer-review
188
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(Scopus)