Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

  • B. Luo*
  • , J. W. Johnson
  • , J. Kim
  • , R. M. Mehandru
  • , F. Ren
  • , B. P. Gila
  • , A. H. Onstine
  • , C. R. Abernathy
  • , S. J. Pearton
  • , A. G. Baca
  • , R. D. Briggs
  • , R. J. Shul
  • , C. Monier
  • , J. Han
    • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

189 Citations (Scopus)

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Material Science

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Earth and Planetary Sciences