Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers

S. Nigam; Jihyun Kim; F. Ren; G. Chung; M. F. MacMillan; S. J. Pearton

doi:10.1149/1.1524751

Influence of PECVD of SiO₂ passivation layers on 4H-SiC Schottky rectifiers

S. Nigam, Jihyun Kim, F. Ren, G. Chung, M. F. MacMillan, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effect of the deposition conditions of plasma enhanced chemical vapor deposition (PECVD) SiO₂ layers on the electrical properties of 4H-SiC Schottky rectifiers is reported. In a SiH₄/N₂O plasma chemistry, the reverse breakdown voltage, forward turn-on voltage, and on-state resistance of the rectifiers all increase with increasing plasma power and SiH₄ content and decreasing deposition pressure. The maximum changes in all these parameters were ≤20% over a broad range of plasma conditions and show that 4H-SiC is relatively resistant to changes induced by the ion bombardment and high atomic hydrogen flux present during PECVD of dielectrics for surface passivation.

Original language	English
Pages (from-to)	G4-G6
Journal	Electrochemical and Solid-State Letters
Volume	6
Issue number	1
DOIs	https://doi.org/10.1149/1.1524751
Publication status	Published - 2003 Jan
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers",

abstract = "The effect of the deposition conditions of plasma enhanced chemical vapor deposition (PECVD) SiO2 layers on the electrical properties of 4H-SiC Schottky rectifiers is reported. In a SiH4/N2O plasma chemistry, the reverse breakdown voltage, forward turn-on voltage, and on-state resistance of the rectifiers all increase with increasing plasma power and SiH4 content and decreasing deposition pressure. The maximum changes in all these parameters were ≤20% over a broad range of plasma conditions and show that 4H-SiC is relatively resistant to changes induced by the ion bombardment and high atomic hydrogen flux present during PECVD of dielectrics for surface passivation.",

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T1 - Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers

AU - Nigam, S.

AU - Kim, Jihyun

AU - Ren, F.

AU - Chung, G.

AU - MacMillan, M. F.

AU - Pearton, S. J.

PY - 2003/1

Y1 - 2003/1

N2 - The effect of the deposition conditions of plasma enhanced chemical vapor deposition (PECVD) SiO2 layers on the electrical properties of 4H-SiC Schottky rectifiers is reported. In a SiH4/N2O plasma chemistry, the reverse breakdown voltage, forward turn-on voltage, and on-state resistance of the rectifiers all increase with increasing plasma power and SiH4 content and decreasing deposition pressure. The maximum changes in all these parameters were ≤20% over a broad range of plasma conditions and show that 4H-SiC is relatively resistant to changes induced by the ion bombardment and high atomic hydrogen flux present during PECVD of dielectrics for surface passivation.

AB - The effect of the deposition conditions of plasma enhanced chemical vapor deposition (PECVD) SiO2 layers on the electrical properties of 4H-SiC Schottky rectifiers is reported. In a SiH4/N2O plasma chemistry, the reverse breakdown voltage, forward turn-on voltage, and on-state resistance of the rectifiers all increase with increasing plasma power and SiH4 content and decreasing deposition pressure. The maximum changes in all these parameters were ≤20% over a broad range of plasma conditions and show that 4H-SiC is relatively resistant to changes induced by the ion bombardment and high atomic hydrogen flux present during PECVD of dielectrics for surface passivation.

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DO - 10.1149/1.1524751

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AN - SCOPUS:0037244688

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VL - 6

SP - G4-G6

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 1

ER -

Influence of PECVD of SiO₂ passivation layers on 4H-SiC Schottky rectifiers

Abstract

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