Influence of resonant excitation and carrier lifetime on the optical properties of coupled CdSe quantum dots

Eunsoon Oh; Dong Gi Choi; Jung Hyun Park; Tae Kyu Lee; Sanghoon Lee; J. K. Furdyna

doi:10.3938/jkps.53.106

Influence of resonant excitation and carrier lifetime on the optical properties of coupled CdSe quantum dots

Eunsoon Oh, Dong Gi Choi, Jung Hyun Park, Tae Kyu Lee, Sanghoon Lee, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We studied the time-integrated and time-resolved photoluminescence (PL) from coupled quantum dot (QD) systems (CdSe/CdZnMnSe and CdSe/CdMnSe), which exhibited an antiferromagnetic interaction between the QDs in adjacent layers. We observed a peculiar PL peak shift with an excitation wavelength close to the bandgap of the CdSe QDs, which was attributed to a resonant excitation condition. We found that the PL lifetimes of these structures were significantly influenced by non-radiative recombination processes and that the temperature dependence of the PL intensity was strongly correlated with the PL lifetime.

Original language	English
Pages (from-to)	106-109
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	53
Issue number	1
DOIs	https://doi.org/10.3938/jkps.53.106
Publication status	Published - 2008 Jul

Keywords

Carrier lifetime
CdSe quantum dot
Optical properties
Resonance

ASJC Scopus subject areas

General Physics and Astronomy

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10.3938/jkps.53.106

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abstract = "We studied the time-integrated and time-resolved photoluminescence (PL) from coupled quantum dot (QD) systems (CdSe/CdZnMnSe and CdSe/CdMnSe), which exhibited an antiferromagnetic interaction between the QDs in adjacent layers. We observed a peculiar PL peak shift with an excitation wavelength close to the bandgap of the CdSe QDs, which was attributed to a resonant excitation condition. We found that the PL lifetimes of these structures were significantly influenced by non-radiative recombination processes and that the temperature dependence of the PL intensity was strongly correlated with the PL lifetime.",

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T1 - Influence of resonant excitation and carrier lifetime on the optical properties of coupled CdSe quantum dots

AU - Oh, Eunsoon

AU - Choi, Dong Gi

AU - Park, Jung Hyun

AU - Lee, Tae Kyu

AU - Lee, Sanghoon

AU - Furdyna, J. K.

PY - 2008/7

Y1 - 2008/7

N2 - We studied the time-integrated and time-resolved photoluminescence (PL) from coupled quantum dot (QD) systems (CdSe/CdZnMnSe and CdSe/CdMnSe), which exhibited an antiferromagnetic interaction between the QDs in adjacent layers. We observed a peculiar PL peak shift with an excitation wavelength close to the bandgap of the CdSe QDs, which was attributed to a resonant excitation condition. We found that the PL lifetimes of these structures were significantly influenced by non-radiative recombination processes and that the temperature dependence of the PL intensity was strongly correlated with the PL lifetime.

AB - We studied the time-integrated and time-resolved photoluminescence (PL) from coupled quantum dot (QD) systems (CdSe/CdZnMnSe and CdSe/CdMnSe), which exhibited an antiferromagnetic interaction between the QDs in adjacent layers. We observed a peculiar PL peak shift with an excitation wavelength close to the bandgap of the CdSe QDs, which was attributed to a resonant excitation condition. We found that the PL lifetimes of these structures were significantly influenced by non-radiative recombination processes and that the temperature dependence of the PL intensity was strongly correlated with the PL lifetime.

KW - Carrier lifetime

KW - CdSe quantum dot

KW - Optical properties

KW - Resonance

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Influence of resonant excitation and carrier lifetime on the optical properties of coupled CdSe quantum dots

Abstract

Keywords

ASJC Scopus subject areas

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