Influence of seed layers on microstructure and electrical properties of indium-tin oxide films

Younggun Han; Donghwan Kim; Jun Sik Cho; Seok Keun Koh

doi:10.1116/1.1541571

Influence of seed layers on microstructure and electrical properties of indium-tin oxide films

Younggun Han, Donghwan Kim, Jun Sik Cho, Seok Keun Koh

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The change of microstructure of ITO films with deposition condition combination was studied. The initial stage of double-layer ITO films effectively determined the microstructure and the preferred orientation of the total film. By comparing double- and single-layer ITO films, the electrical properties did not change regardless of the type of microstructure, domain, or grain structure.

Original language	English
Pages (from-to)	288-292
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	1 SPEC.
DOIs	https://doi.org/10.1116/1.1541571
Publication status	Published - 2003 Jan

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Cite this

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title = "Influence of seed layers on microstructure and electrical properties of indium-tin oxide films",

abstract = "The change of microstructure of ITO films with deposition condition combination was studied. The initial stage of double-layer ITO films effectively determined the microstructure and the preferred orientation of the total film. By comparing double- and single-layer ITO films, the electrical properties did not change regardless of the type of microstructure, domain, or grain structure.",

author = "Younggun Han and Donghwan Kim and Cho, {Jun Sik} and Koh, {Seok Keun}",

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AU - Han, Younggun

AU - Kim, Donghwan

AU - Cho, Jun Sik

AU - Koh, Seok Keun

PY - 2003/1

Y1 - 2003/1

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AB - The change of microstructure of ITO films with deposition condition combination was studied. The initial stage of double-layer ITO films effectively determined the microstructure and the preferred orientation of the total film. By comparing double- and single-layer ITO films, the electrical properties did not change regardless of the type of microstructure, domain, or grain structure.

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SN - 1071-1023

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1 SPEC.

ER -

Influence of seed layers on microstructure and electrical properties of indium-tin oxide films

Abstract

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