Influence of SiN x:H film properties according to gas mixture ratios for crystalline silicon solar cells

Kyung Dong Lee, S. S. Dahiwale, Young Do Kim, Jong Han Lee, Seongtak Kim, Soohyun Bae, Sungeun Park, Sung Ju Tark, Donghwan Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The Hydrogenated silicon nitride (SiN x:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiN x:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH 4 + NH 3 + N 2, SiH 4 + NH 3, SiH 4 + N 2), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation (electrical and chemical) properties. The film deposited with the gas mixture of SiH 4 + NH 3 + N 2 showed the best properties in before and after firing process conditions. The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH 4 + NH 3 + N 2) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2%. The reason for the high efficiency using SiH 4 + NH 3 + N 2 is because of the good optical transmittance and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

Original languageEnglish
Pages (from-to)241-245
Number of pages5
JournalCurrent Applied Physics
Issue number1
Publication statusPublished - 2013 Jan


  • Field effect
  • Gas mixture
  • Optical property
  • Passivation
  • Silicon nitride
  • Silicon solar cells

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)


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