Abstract
In summary, we have systematically investigated size dependent light output, spectra shift in 520 nm InGaN based-uLEDs. Our experimental results confirm that smaller uLEDs can deliver higher power densities and sustain higher current densities. Current density dependence of the EL properties of different-size uLEDs exhibited that the spectral shift was dependent on not only current density but also chip size. The band-combined effects of filling effect and self-heating-induced bandgap shrinkage are responsible for the complicated phenomenon.
Original language | English |
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Title of host publication | ECS Transactions |
Editors | J. Hite, V. Chakrapani, J. Zavada, T. J. Anderson, S. Kilgore |
Publisher | Electrochemical Society Inc. |
Pages | 13-18 |
Number of pages | 6 |
Edition | 7 |
ISBN (Electronic) | 9781607688358 |
ISBN (Print) | 9781607688358 |
DOIs | |
Publication status | Published - 2018 |
Event | Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting - Seattle, United States Duration: 2018 May 13 → 2018 May 17 |
Publication series
Name | ECS Transactions |
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Number | 7 |
Volume | 85 |
ISSN (Print) | 1938-6737 |
ISSN (Electronic) | 1938-5862 |
Other
Other | Symposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting |
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Country/Territory | United States |
City | Seattle |
Period | 18/5/13 → 18/5/17 |
Bibliographical note
Funding Information:This work was supported by the Global Research Laboratory program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (NRF-2017K1A1A2013160).
ASJC Scopus subject areas
- General Engineering