Influence of stress on structural and dielectric anomaly of Bi 2(Zn1/3Ta2/3)2O7 thin films

Jun Hong Noh; Hee Bum Hong; Kug Sun Hong

Influence of stress on structural and dielectric anomaly of Bi ₂(Zn_1/3Ta_2/3)₂O₇ thin films

Jun Hong Noh, Hee Bum Hong, Kug Sun Hong

Research output: Contribution to journal › Conference article › peer-review

Abstract

Bi₂(Zn_1/3Ta_2/3)₂O₇ (BZT) thin films were grown on the (111) oriented Pt/TiO_x/SiO ₂/Si substrates using a pulsed laser deposition (PLD) technique. BZT thin films deposited at an oxygen partial pressure of 400 mTorr have the non-stoichiometric anomalous cubic phase despite the BZT target was the monoclinic phase. Compositions, the lattice mismatch, the interfacial layer and the residual stress in the film were investigated as the factors which may affect the formation of the anomalous cubic phase. Among them, the coherent interfacial layer which formed at high oxygen pressures resulted in the formation of the cubic phase by reducing the internal stress.

Original language	English
Article number	O12.15
Pages (from-to)	369-375
Number of pages	7
Journal	Materials Research Society Symposium Proceedings
Volume	875
Publication status	Published - 2005
Externally published	Yes
Event	2005 Materials Research Society Spring Meeting - San Francisco, CA, United States Duration: 2005 Mar 28 → 2005 Apr 1

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{a33b1d8e80404bf9a299f5620a809952,

title = "Influence of stress on structural and dielectric anomaly of Bi 2(Zn1/3Ta2/3)2O7 thin films",

abstract = "Bi2(Zn1/3Ta2/3)2O7 (BZT) thin films were grown on the (111) oriented Pt/TiOx/SiO 2/Si substrates using a pulsed laser deposition (PLD) technique. BZT thin films deposited at an oxygen partial pressure of 400 mTorr have the non-stoichiometric anomalous cubic phase despite the BZT target was the monoclinic phase. Compositions, the lattice mismatch, the interfacial layer and the residual stress in the film were investigated as the factors which may affect the formation of the anomalous cubic phase. Among them, the coherent interfacial layer which formed at high oxygen pressures resulted in the formation of the cubic phase by reducing the internal stress.",

author = "Noh, {Jun Hong} and Hong, {Hee Bum} and Hong, {Kug Sun}",

year = "2005",

language = "English",

volume = "875",

pages = "369--375",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2005 Materials Research Society Spring Meeting ; Conference date: 28-03-2005 Through 01-04-2005",

}

TY - JOUR

T1 - Influence of stress on structural and dielectric anomaly of Bi 2(Zn1/3Ta2/3)2O7 thin films

AU - Noh, Jun Hong

AU - Hong, Hee Bum

AU - Hong, Kug Sun

PY - 2005

Y1 - 2005

N2 - Bi2(Zn1/3Ta2/3)2O7 (BZT) thin films were grown on the (111) oriented Pt/TiOx/SiO 2/Si substrates using a pulsed laser deposition (PLD) technique. BZT thin films deposited at an oxygen partial pressure of 400 mTorr have the non-stoichiometric anomalous cubic phase despite the BZT target was the monoclinic phase. Compositions, the lattice mismatch, the interfacial layer and the residual stress in the film were investigated as the factors which may affect the formation of the anomalous cubic phase. Among them, the coherent interfacial layer which formed at high oxygen pressures resulted in the formation of the cubic phase by reducing the internal stress.

AB - Bi2(Zn1/3Ta2/3)2O7 (BZT) thin films were grown on the (111) oriented Pt/TiOx/SiO 2/Si substrates using a pulsed laser deposition (PLD) technique. BZT thin films deposited at an oxygen partial pressure of 400 mTorr have the non-stoichiometric anomalous cubic phase despite the BZT target was the monoclinic phase. Compositions, the lattice mismatch, the interfacial layer and the residual stress in the film were investigated as the factors which may affect the formation of the anomalous cubic phase. Among them, the coherent interfacial layer which formed at high oxygen pressures resulted in the formation of the cubic phase by reducing the internal stress.

UR - http://www.scopus.com/inward/record.url?scp=30644476874&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30644476874&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:30644476874

SN - 0272-9172

VL - 875

SP - 369

EP - 375

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - O12.15

T2 - 2005 Materials Research Society Spring Meeting

Y2 - 28 March 2005 through 1 April 2005

ER -

Influence of stress on structural and dielectric anomaly of Bi ₂(Zn_1/3Ta_2/3)₂O₇ thin films

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this