Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors

  • Kihyun Kim*
  • , Geunwoo Jeng
  • , Pilsu Kim
  • , Jonghak Choi
  • , A. E. Bolotnikov
  • , G. S. Camarda
  • , R. B. James
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    22 Citations (Scopus)

    Abstract

    The detector performance and presence of Te secondary-phase defects distribution were investigated in CdMnTe (CMT) crystals prepared with different cooling rates. Detectors fabricated from fast-cooled CMT crystals exhibit a relatively poor detector performance, although IR transmission microscopy measurements show that the Te secondary-phase defects have a lower concentration and smaller size compared to slow-cooled crystals. Current deep-level transient spectroscopy (I-DLTS) measurements for both CMT detectors reveal the same trap levels, but there is a clear difference in the densities for the 0.26- and 0.42-eV traps for the two different cooling schemes. These two traps are probably attributed to Cd vacancies and Te anti-site defects, respectively. In addition, there is some likelihood that the traps are anti-correlated with respect to each other.

    Original languageEnglish
    Article number063706
    JournalJournal of Applied Physics
    Volume114
    Issue number6
    DOIs
    Publication statusPublished - 2013 Aug 14

    Bibliographical note

    Funding Information:
    This work was supported by Korea University (K1222241) and the U.S. Department of Energy, Office of Defense Nonproliferation Research and Development, DNN R&D.

    ASJC Scopus subject areas

    • General Physics and Astronomy

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