Influence of the local environment on Mn acceptors in GaAs

Keyphrases

• Acceptor Complex 50%
• Atomically Precise 50%
• Band Bending 50%
• Binding Energy 50%
• Charged Defects 50%
• Deep Acceptor 50%
• Gallium Arsenide 100%
• Impurities 100%
• Impurity Atoms 50%
• Ionization State 50%
• Iterative Simulation 50%
• Local Environment 100%
• Microscope Image 50%
• Ring-like Structures 50%
• Scanning Tunneling Microscope 100%
• Semiconductor Materials 50%
• Statistical Variation 50%
• Surface Layer 50%
• Tip-induced Band Bending 50%
• Transistor 50%
• Tunneling Spectroscopy 50%

Material Science

• Gallium Arsenide 100%
• Semiconductor Material 50%
• Surface (Surface Science) 50%
• Transistor 50%