Influence of the local environment on Zn acceptors in the GaAs(110) surface

D. H. Lee, N. M. Santagata, J. A. Gupta

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Individual Zn acceptors in the GaAs (110) surface layer are studied with a scanning tunneling microscope. Tunneling spectroscopy reveals a peak associated with a Zn acceptor state, whose linewidth and response to local band bending depend on proximity to neighboring subsurface Zn acceptors. Though identical in topographic images, surface-layer Zn with nearby subsurface neighbors exhibits a broad peak that is insensitive to band bending, while more isolated surface-layer Zn exhibit a narrow peak which is sensitive to band bending. These results are suggestive of a shallow-to-deep acceptor transition, driven by the random dopant distribution.

Original languageEnglish
Article number053124
JournalApplied Physics Letters
Volume99
Issue number5
DOIs
Publication statusPublished - 2011 Aug 1
Externally publishedYes

Bibliographical note

Funding Information:
We thank D. R. Daughton, A. J. Heinrich, S. Loth, M. E. Flatté, and A. H. MacDonald for helpful discussions. We are grateful for support from the Arnold and Mabel Beckman Foundation, NSF CAREER award (DMR-0645451) and the Center for Emergent Materials at Ohio State University, an NSF Materials Research Science and Engineering Center (DMR-0820414).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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