Influence of the local environment on Zn acceptors in the GaAs(110) surface

D. H. Lee; N. M. Santagata; J. A. Gupta

doi:10.1063/1.3624535

Influence of the local environment on Zn acceptors in the GaAs(110) surface

D. H. Lee, N. M. Santagata, J. A. Gupta

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Individual Zn acceptors in the GaAs (110) surface layer are studied with a scanning tunneling microscope. Tunneling spectroscopy reveals a peak associated with a Zn acceptor state, whose linewidth and response to local band bending depend on proximity to neighboring subsurface Zn acceptors. Though identical in topographic images, surface-layer Zn with nearby subsurface neighbors exhibits a broad peak that is insensitive to band bending, while more isolated surface-layer Zn exhibit a narrow peak which is sensitive to band bending. These results are suggestive of a shallow-to-deep acceptor transition, driven by the random dopant distribution.

Original language	English
Article number	053124
Journal	Applied Physics Letters
Volume	99
Issue number	5
DOIs	https://doi.org/10.1063/1.3624535
Publication status	Published - 2011 Aug 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3624535

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title = "Influence of the local environment on Zn acceptors in the GaAs(110) surface",

abstract = "Individual Zn acceptors in the GaAs (110) surface layer are studied with a scanning tunneling microscope. Tunneling spectroscopy reveals a peak associated with a Zn acceptor state, whose linewidth and response to local band bending depend on proximity to neighboring subsurface Zn acceptors. Though identical in topographic images, surface-layer Zn with nearby subsurface neighbors exhibits a broad peak that is insensitive to band bending, while more isolated surface-layer Zn exhibit a narrow peak which is sensitive to band bending. These results are suggestive of a shallow-to-deep acceptor transition, driven by the random dopant distribution.",

author = "Lee, {D. H.} and Santagata, {N. M.} and Gupta, {J. A.}",

note = "Funding Information: We thank D. R. Daughton, A. J. Heinrich, S. Loth, M. E. Flatt{\'e}, and A. H. MacDonald for helpful discussions. We are grateful for support from the Arnold and Mabel Beckman Foundation, NSF CAREER award (DMR-0645451) and the Center for Emergent Materials at Ohio State University, an NSF Materials Research Science and Engineering Center (DMR-0820414).",

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AU - Gupta, J. A.

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PY - 2011/8/1

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N2 - Individual Zn acceptors in the GaAs (110) surface layer are studied with a scanning tunneling microscope. Tunneling spectroscopy reveals a peak associated with a Zn acceptor state, whose linewidth and response to local band bending depend on proximity to neighboring subsurface Zn acceptors. Though identical in topographic images, surface-layer Zn with nearby subsurface neighbors exhibits a broad peak that is insensitive to band bending, while more isolated surface-layer Zn exhibit a narrow peak which is sensitive to band bending. These results are suggestive of a shallow-to-deep acceptor transition, driven by the random dopant distribution.

AB - Individual Zn acceptors in the GaAs (110) surface layer are studied with a scanning tunneling microscope. Tunneling spectroscopy reveals a peak associated with a Zn acceptor state, whose linewidth and response to local band bending depend on proximity to neighboring subsurface Zn acceptors. Though identical in topographic images, surface-layer Zn with nearby subsurface neighbors exhibits a broad peak that is insensitive to band bending, while more isolated surface-layer Zn exhibit a narrow peak which is sensitive to band bending. These results are suggestive of a shallow-to-deep acceptor transition, driven by the random dopant distribution.

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Influence of the local environment on Zn acceptors in the GaAs(110) surface

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